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IDEAS 499/2008
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COMPLEX STUDIES OF THE PHYSICS OF DEFECTS PRODUCED BY EXTREME FIELDS OF RADIATION IN SILICON BASED MATERIALS

Project Coordinator: National Institute of Materials Physics

Project Director: Dr. Sorina Lazanu

Abstract

Objectives

Activities

Results

Abstract

In spite of the fact that degradation phenomena produced in materials and devices in radiation fields, and the defects in crystalline semiconductors are studied since more than half a century, a lot of aspects are not yet clarified. The aim of the present project is to bring contributions in this subject. So, this is of fundamental research, situated at the border between semiconductor physics, particle physics, atomic and nuclear physics, with potential to be applied in high energy physics, in the information technology, in nuclear medicine.

The problems related to the correlation of defect production with the energy deposited in crystalline semiconductors in radiation fields and with spatial distribution of produced defects, to the interactions between primary defects and of their aggregation in stable defects (clusters), the stability and metastability of these agregates using energetic and thermodynamic considerations will be studied

In this project, both theoretical and experimental methods will be used.

The aim and the objectives of the project are in the frame of the programme IDEI from PNCDI II, and also in the top research subjects of the international scientific community. The research team is composed from the principal investigator, who works in the field since 1990, from two experienced researchers, one specialised in semiconductor physics (mainly electric measurements and modelling), the other (postdoc) specialised in theoretical physics, and from 3 early stage researchers: one PhD student and other 2 which could enrol in PhD studies during the project. The dissemination of results will be performed in the web page of the project, in 4 publications in ISI quoted journals, in 3 communications in international conferences, in the research and auto-evaluation reports

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Objectives

  • Radiation induced point defects in silicon
  • Microscopic-macroscopic investigation of the degradation induced by irradiation
  • Partition of the energy deposited due to irradiation
  • Spatial distribution of the energy deposited in silicon by hadrons and ions
  • Interactions and clustering of primary defects in stable extended defects in silicon
  • Correlation between defect production and energy loss in crystalline semiconductors in radiation fields

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Activities

Stages

Activities

Calendar

Stage I

* Point defects induced by irradiation in silicon
   1.1 Literature data synthesis regarding point defect properties
   1.2 Development of defect kinetics
   1.3 Comparison calculations / experiment
* Microscopic/ macroscopic investigation of the degradation induced by irradiation
   2.1 Purchase of Si wafers

sept 2009

Stage II

* Partition of the energy deposited
   1.1 Analytical model
   1.2 Results for different particles / ions
* Microscopic/ macroscopic investigation of the degradation induced by irradiation
   2.1 Wafer preparation for irradiation

dec 2009

Stage III

* Spatial distribution of the energy deposited in silicon by hadrons and ions

1.1 SRIM simulations for ions in Si

1.2 SRIM simulations for hadrons in silicon

 

* Microscopic-macroscopic investigation of degradation induced by irradiation

2.1 irradiations

2.2 preliminary measurements of irradiated samples

 

* Study of primary defect interactions and their clustering in stable defects

3.1 consideration of different interaction mechanisms

 

dec 2010

Stage IV

 

 

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Results

2009

Published Papers

1. S. Lazanu, M.L. Ciurea, I. Lazanu, J. Opt. Adv. Mat. 11 (2009) 2140
2. I. Lazanu, S. Lazanu, Rom. Rep. Phys. 62 (2010) accepted

Conferences & Workshops

1. Romanian Conference Adv. Materials, 25- 28 August 2009, Brasov, Romania: "Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters", S. Lazanu, M.L. Ciurea, I. Lazanu
2. International Semiconductor Conference CAS 2009, 11-14 October 2009, Sinaia, Romania: "Defect production in silicon and germanium by low temperature irradiation", S. Lazanu, I. Lazanu, A. Lepadatu and I. Stavarache

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Results

2010

Published Papers

1. I. Lazanu, S. Lazanu, Transient processes induced by heavy projectiles in silicon, Nucl. Instr. Meth. Phys res B 268 (2010) 2241-2245

2) S. Lazanu, I. Lazanu, Gh. Ciobanu, Modelling the transient processes produced under heavy particle irradiation, acceptat la Nucl. Instr. Meth. Phys Res. B

Conferences & Workshops

1) S. Lazanu, I. Lazanu, Gh. Iordache, I. Stavarache, A. Lepadatu and A. Slav, Study of the interactions of ions in silicon: transient processes and defect production, 2010 Intnational Semiconductor Conference Vol. 2, pp 329-332, ISSN 1545-827X


*** CAS best paper award: Defect production in Si and Ge by low temperature irradiation, S. Lazanu, I. Lazanu, A. Lepadatu. I. Stavarache (2009).

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Results

2011

Published Papers

Conferences & Workshops

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Updated: 31 ian 2012 - Ionel Stavarache: stavarache@infim.ro

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