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Magdalena Lidia CIUREA
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CURRICULUM VITAE

Education:

  • Faculty of Physics, University of Bucharest. Licence in Physics (equivalent of MSc, at the end of 5 years curriculum), mastering in Solid State Physics; University of Bucharest (June 1972)
  • 1995 Doctoral degree in Physics
ciurea

Professional skills:

  • Complex characterization and modeling of semiconductors and devices: electrical properties, Hall and magnetoresistence effects , phototransport, trapping phenomena
  • Electrochemical preparation of nanocrystalline porous silicon
  • Preparation of 0D and 2D structures based on Si and Ge by magnetron sputtering

Research contributions on topics of:

  • Photoluminescent porous silicon: split of the visible broad maximum of photoluminescence in two submaxima by preparation
  • Electrical transport and phototransport: conduction mechanisms, percolation phenomena
  • Quantum confinement effects: unified model for energy levels in 0D, 1D and 2D systems
  • Trapping phenomena (experiment and modelling):finding of trap parameters that are not directly measurable, identification of stress induced traps

Professional experience acquired by research appointments abroad:

  • Research stages at Philipps University in Marburg , Germany in the period 1994 – 1996
  • Research stages at the Institute de Microelectronics, NCSR „Demokritos”, Athens, 1998 - 2000

International Memberships:

  • Member of the European Physical Society, EPS
  • Member of SPIE
  • Member of NEXUS

Awards and international recognition:

  • Constantin Miculescu Annual Award for Physics, granted on 1998 by the Romanian Academy of Science
  • 4 “Best Paper Award” at International Semiconductor Conference CAS, in the years 1995, 1997, 2002 and 2003


Selected Recent publications:

STUDY  OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE  PROPERTIES
Lepadatu, AM; Stavarache, I; Stoica, TF, et  al.
DIGEST JOURNAL OF NANOMATERIALS AND  BIOSTRUCTURES, 6 (1), 67-73, 2011.

Numerical  analysis of J-V characteristics of a polymer solar cell
Mitroi, MR; Iancu, V; Fara, L, et al.
PROGRESS  IN PHOTOVOLTAICS, 19 (3), 301-306, 2011.

Calculation  of the quantum efficiency for the absorption on confinement levels in quantum  dots
A Iancu, V; Mitroi, MR; Lepadatu, AM, et al.
A  JOURNAL OF NANOPARTICLE RESEARCH, 13 (4), 1605-1612, 2011.

Stress-induced  traps in multilayered structures
Ciurea, ML; Lazanu, S;  Stavarache, I, et al.
JOURNAL OF APPLIED  PHYSICS, 109 (1) A  Article Number: 013717, 2011.

Structural  investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
A Stavarache, I; Lepadatu, AM; Gheorghe, NG, et al.
A  JOURNAL OF NANOPARTICLE RESEARCH, 13 (1), 221-232, 2011.

Electrical  behavior of multi-walled carbon nanotube network embedded in amorphous silicon  nitride
Stavarache, I; Lepadatu, AM; Teodorescu, VS, et  al.
NANOSCALE RESEARCH LETTERS,A 6 (1) A  Article  Number: 88, 2010.

Quantum Confinement in Nanometric Structures
Ciurea, ML; Iancu,  V
Conference Information: International Workshops on  New Trends in Science and Technology (NTST 08)/ Fractional Differentiation and  its Applications (FDA08), Date: NOV, 2008 Cankaya  Univ Ankara TURKEY
NEW TRENDS IN  NANOTECHNOLOGY AND FRACTIONAL CALCULUS APPLICATIONS, 57-67, 2010.

The  influence of shape and potential barrier on confinement energy levels in quantum  dots
Lepadatu, AM; Stavarache, I; Ciurea, ML, et  al.
JOURNAL OF APPLIED PHYSICS,A 107 (3)  A  Article Number: 033721, 2010.

INVESTIGATION  OF ELECTRICAL PROPERTIES OF CARBON NANOTUBES
Ciurea, ML;  Stavarache, I; Lepadatu, AM, et al.
Conference Information: 32nd International Semiconductor Conference, Date: OCT 12-14, 2009 Sinaia ROMANIA
CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2,  PROCEEDINGS, 121-124,A 2009.

Semiconductor  detectors for high radiation fields: microscopic processes in materials and the  control of device parameters
Lazanu, S; Ciurea, ML; Lazanu,  I
JOURNAL OF OPTOELECTRONICS AND ADVANCED  MATERIALS, 11 (12), 2150-2154, 2009.

Point  and extended defects in irradiated silicon and consequences for detectors
Lazanu, S; Ciurea, ML; Lazanu, I
Conference Information: International Conference on Extended Defects in Semiconductors  (EDS 2008), Date: SEP 14-19, 2008 Poitiers  FRANCE
PHYSICA STATUS SOLIDI C -  CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 6 (8), 1974-1978, 2009.

MODELING  OF TRAP DISCHARGING PROCESSES IN MULTIPLE QUANTUM WELL STRUCTURES
Ciurea, ML; Iancu, V; Stavarache, I, et al.
Conference  Information: 31st International Semiconductor Conference  2008, Date: OCT 13-15, 2008 Sinaia ROMANIA
CAS: 2008 INTERNATIONAL SEMICONDUCTOR  CONFERENCE, PROCEEDINGS, 81-84, 2008.

Morphology  of Si nanocrystallites embedded in SiO2 matrix
Teodorescu,  VS; Ciurea, ML; Iancu, V, et al.
JOURNAL OF  MATERIALS RESEARCH, 23 (11), 2990-2995, 2008.

Polypyrrole  - porous silicon nanocomposites
Popa, C; Turcu, R;  Craciunescu, I, et al.
Conference Information: 5th  Conference on Isotopic and Molecular Processes, Date: SEP 20-22, 2007 Cluj Napoca ROMANIA
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 10 (9), 2319-2324, 2008.

Defects  in silicon: From bulk crystals to nanostructures
Ciurea, ML;  Iancu, V; Lazanu, S, et al.
ROMANIAN REPORTS IN  PHYSICS, 60 (3), 735-748, 2008.

Some  contributions to the understanding of the puzzle of physical processes of  degradation in irradiated silicon
Lazanu, S; Lazanu, I;  Ciurea, ML
Conference Information: International  Semiconductor Conference, Date: OCT 15-17, 2007  Sinaia ROMANIA
CAS 2007 INTERNATIONAL  SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 319-322, 2007.

Why  the energy levels observed in electrical transport, phototransport and  photoluminescence are different?
Ciurea, ML; Iancu,  V
Conference Information: International Semiconductor  Conference, Date: OCT 15-17, 2007 Sinaia  ROMANIA
CAS 2007 INTERNATIONAL  SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 41-44, 2007.

Trapping  phenomena in silicon-based nanocrystalline semiconductors
Ciurea, ML; Iancu, V; Mitroi, MR
Conference Information: 3rd Nano and Giga Forum, Date: 2007  Arizona State Univ Tempe AZ
SOLID-STATE  ELECTRONICS, 51 (10), 1328-1337, 2007.

Phototransport  and photoluminescence in nanocrystalline porous silicon
 Iancu, V; Ciurea, ML; Stavarache, I, et al.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9 (8), 2638-2643, 2007.

Percolation  phenomena in Si-SiO2 nanocomposite films
Stavarache, I;  Ciurea, ML
JOURNAL OF OPTOELECTRONICS AND  ADVANCED MATERIALS, 9 (8), 2644-2647, 2007.

Quantum  confinement modeling of electrical and optical processes in nanocrystalline  silicon
Ciurea, ML; Iancu, V; Stavarache, I
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, 2156-2160, 2006.

Electronic  transport in Si-SiO2 nanocomposite films
Ciurea, ML;  Teodorescu, VS; Iancu, V, et al.
CHEMICAL  PHYSICS LETTERS, 423, 225-228, 2006.

Quantum  confinement in the photoluminescence of nanocrystalline porous silicon
Stavarache, I; Ciurea, ML; Iancu, V
Conference Information: International Semiconductor Conference, Date: OCT 03-05, 2005 Sinaia ROMANIA
CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE VOL 1 AND  2, 55-58, 2005.

Quantum  confinement in nanocrystalline silicon
Ciurea,  ML
Conference Information: 17th European Conference on  Atomic and Molecular Physics of Ionized Gases, Date: SEP 01-05, 2004 Constanta ROMANIA
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7 (5), 2341-2346, 2005.

Influence  of crystal growth technology on the tolerance to radiation of silicon for  detectors at future accelerators
Lazanu, S; Lazanu, I;  Ciurea, ML
Conference Information: 27th International  Semiconductor Conference (CAS), Date: OCT 04-06,  2004 Sinaia ROMANIA
2004 International  Semiconductor Conference, Vols 1and 2, Proceedings, 419-422, 2004.

Microstructure  of Si/SiO2 nanocomposite films
Teodorescu, VS; Ciurea, ML;  Iancu, V, et al.
Conference Information: 27th  International Semiconductor Conference (CAS), Date: OCT 04-06, 2004 Sinaia ROMANIA
2004 International Semiconductor Conference, Vols 1and 2,  Proceedings, 59-62,A 2004.

Conduction  mechanisms in silicon-based nanocomposites
Iancu, V;  Draghici, M; Jdira, L, et al.
JOURNAL OF  OPTOELECTRONICS AND ADVANCED MATERIALS, 6 (1), 53-56, 2004.

Electrical  behavior of Si/SiO2 nanocomposite films
Iancu, V; Jdira, L;  Draghici, M, et al.
Conference Information: 26th  International Semiconductor Conference (CAS 2003), Date: SEP 28-OCT 02, 2003 Sinaia ROMANIA
2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2,  PROCEEDINGS, 83-86,A 2003.

Modeling  of optical charging spectroscopy investigation of trapping phenomena in  nanocrystalline porous silicon
Iancu, V; Ciurea, ML;  Draghici, M
JOURNAL OF APPLIED PHYSICS, 94 (1), 216-223, 2003

Coupled  confinement effect on the photoluminescence and electrical transport in porous  silicon
Ciurea, ML; Draghici, M; Iancu, V, et  al.
Conference Information: International Conference on  Luminescence and Optical Spectroscopy of Condensed Matter, Date: AUG 24-29, 2002 BUDAPEST HUNGARY
JOURNAL OF LUMINESCENCE, 102, 492-497, 2003.

Non-equilibrium  electronic processes in nanocrystalline silicon
Ciurea, ML;  Iancu, V; Draghici, M, et al.
Conference Information: Conference on Advanced Topics in Optoelectronics,  Microelectronics, and Nanotechnologies, Date: NOV  21-23, 2002 BUCHAREST ROMANIA
ADVANCED  TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES, 5227, 267-273, 2002.

Carriers  transport in semiconducting films formed by crystalline nanodots
Iancu, V; Ciurea, ML; Draghici, M
Conference Information: International Semiconductor Conference, Date: OCT 09-13, 2001 SINAIA ROMANIA
2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2,  PROCEEDINGS, 95-98,A 2001.
 

Quantum  confinement model for phototransport processes in nanocrystalline porous  silicon
Ciurea, ML; Stavarache, I; Iancu, V
Conference  Information: 29th International Semiconductor Conference  (CAS 2006), Date: SEP 27-29, 2006 Sinaia  ROMANIA
2006 International  Semiconductor Conference, Vols 1 and 2, 49-52, 2001.

Traps  in (nc-Si/CaF2)(50) nanostructures
Draghici, M; Jdira, L;  Iancu, V, et al.
Conference Information: 25th  International Semiconductor Conference, Date: OCT  08-12, 2002 SINAIA ROMANIA
CAS: 2002  INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 119-122, 2001.

Trapping  levels in (nc-Si/CaF2)(n) multi-quantum wells
Ioannou-Sougleridis, V; Nassiopoulou, AG; Ciurea, ML, et al.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND  SUPRAMOLECULAR SYSTEMS, 15 (1-2), A  Special Issue: SI, 45-47, 2001.

Electrical  properties of nanocrystalline porous silicon
Ciurea, ML;  Iancu, V
Conference Information: 23rd International  Semiconductor Conference (CAS 2000), Date: OCT  10-14, 2000 SINAIA ROMANIA
2000  INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000  PROCEEDINGS, 55-64,A 2000.

Oxidation-induced  modifications of trap parameters in nanocrystalline porous silicon
Draghici, M; Miu, M; Iancu, V, et al.
Conference Information: 2nd International Conference on Porous Semiconductors -  Science and Technology (PSST-2000), Date: MAR  12-17, 2000 MADRID SPAIN
PHYSICA STATUS  SOLIDI A-APPLIED RESEARCH, 182 (1), 239-243, 2000.

Trapping  levels in nanocrystalline porous silicon
Ciurea, ML;  Draghici, M; Lazanu, S, et al.
APPLIED PHYSICS  LETTERS, 76 (21), 3067-3069, 2000.

Microstructural  aspects related to carriers transport properties of nanocrystalline porous  silicon films
Ciurea, ML; Teodorescu, VS; Nistor, LC, et  al.
JOURNAL OF THE ELECTROCHEMICAL  SOCIETY, 146 (9), 3516-3521,1999.

Theoretical  model for carriers transport in nanocrystalline porous silicon films
Ciurea, ML; Iancu, V; Pavelescu, G, et al.
Conference  Information: 1998 International Semiconductor Conference  (CAS 98), Date: OCT 06-10, 1998 SINAIA  ROMANIA
CAS'98 PROCEEDINGS - 1998  INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 109-112, 1998.

Change  of the optical properties of porous silicon by post anodization treatments
Pavelescu, G; Ciurea, ML; Mihut, L, et al.
Conference  Information: 1998 International Semiconductor Conference  (CAS 98), Date: OCT 06-10, 1998 SINAIA  ROMANIA
CAS'98 PROCEEDINGS - 1998  INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 455-458, 1998.

The  influence of the thermal annealing on optical properties of porous silicon  films
Baltog, I; Ciurea, ML; Pavelescu, G, et  al.
Conference Information: 5th Conference on Optics  (ROMOPTO 97), Date: SEP 09-12, 1997 BUCHAREST  ROMANIA
FIFTH CONFERENCE ON OPTICS  (ROMOPTO '97), PTS 1 AND 2, 3405, 205-210, 1998.

On  the photoluminescence decay in porous silicon films
Baltog,  I; Ciurea, ML; Pavelescu, G, et al.
Conference Information: 5th Conference on Optics (ROMOPTO 97), Date: SEP 09-12, 1997 BUCHAREST ROMANIA
FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 3405, 623-626, 1998.

Quantum  confinement model for electric transport phenomena in fresh and stored  photoluminescent porous silicon films
Iancu, V; Ciurea,  ML
SOLID-STATE ELECTRONICS,A 42 (10), 1893-1896, 1998.

Electrical  behaviour of fresh and stored porous silicon films
Ciurea,  ML; Baltog, I; Lazar, M, et al.
THIN SOLID  FILMS, 325 (1-2), 271-277, 1998.

Electrical  properties of porous silicon stabilised by storage in ambient
Ciurea, ML; Lazar, M; Lazanu, S, et al.
Conference Information: 1997 International Semiconductor Conference (CAS 97),  Date: OCT 07-11, 1997 SINAIA ROMANIA
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR  CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 177-180, 1997.

Electrical  and structural properties of anodized porous silicon
Ciurea,  ML; Pentia, E; Lazar, M, et al.
Conference Information: 1996 International Semiconductor Conference (CAS 96),  Date: OCT 09-12, 1996 SINAIA ROMANIA
CAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR  CONFERENCE, 19TH EDITION, VOLS 1 AND 2, 233-236, 1996.

Visible  photoluminescence in porous silicon prepared in different conditions -  Temperature dependence and decay
Ciurea, ML; Pentia, E;  Manea, A, et al.
PHYSICA STATUS SOLIDI B-BASIC  RESEARCH, 195 (2), 637-645, 1996.

INTERFACE  TRAPPING STATES IN MISIM STRUCTURES, WITH ZNS-MN
PETRE, D;  PINTILIE, I; CIUREA, ML, et al.
THIN SOLID  FILMS, 260 (1, 54-57, 1995.

TRAPPING  LEVELS IN BI12SIO20 CRYSTALS
PETRE, D; PINTILIE, I; BOTILA,  T, et al.
JOURNAL OF APPLIED PHYSICS, 76 (4), 2216-2219, 1994.

INVESTIGATION  OF TRAPPING LEVELS IN HIGH-RESISTIVITY GAAS SINGLE-CRYSTALS DOPED BY CR, USING  OPTICAL CHARGING SPECTROSCOPY
ENACHESCU, M; CIUREA, ML;  LAZARESCU, M, et al.
Conference Information: 20TH  INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS, Date: AUG 06-10, 1990 THESSALONIKI GREECE
20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS,  VOLS 1-3, 686-689, 1990.

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Updated: 31 ian 2012 - Ionel Stavarache: stavarache@infim.ro