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Mihail Florin LAZARESCU
hm14

CURRICULUM VITAE

Education:

  • Graduated : Univ.Bucharest, Faculty of Chemistry, Dept. Physical Chemistry
  • Postgraduated: PhD stage in Politechnical University of Bucharest
MLazarescu

Work experience:

  • Single crystal growth of III-V and II-VI semiconductor-compounds, metallic alloys synthesis under pressure conditions, garnets crystal synthesis and growth (YIG), thin films obtained by plasma deposition technique, radiation detection (X, IR), surface properties characterization by XPS/ESCA, SHG, XRD methods.
  • Details:
    • Synthesis and single crystal growth of binary and ternary semiconducting intermetallic compounds (III-V, II-VI), oxidic compounds (microwaves-YIG) and alloys (Heussler, hydrogen storage etc.)
    • Growth of single crystalline GaAs of high quality for laser optical components
    • Materials for Optoelectronics and Solar energy conversion applications
    • The study of native oxides structure on Si and III-V semiconductor compounds surfaces by XPS method
    • Synthesis under high pressure of highly homogeneous bulk crystals containing volatile components (semiconductors)
    • The obtaining and characterization of semiconductor sensitive structures/devices based on GaAs
    • The use of some structural (XRD, XPS/ESCA) and optical (SHG, RDS) methods to perform accurate physico-chemical analysis on surfaces and interfaces
    • The experimentation of some so-called non-conventional techniques (EC-ALE, M-PAD) for the thin layer deposition on single-crystalline substrates
    • Structures based on semiconductor surfaces pasivated by thiols
    • In situ preparation and characterization of some structures for X-ray radiation and gases detection.

Membership:

Romanian Society of Optoelectronics

Working stages abroad:

UNIDO Fellowship (1991), Germany - Optical Components for CO2 power lasers (1 month)
 

Selection of recent publications:

Potential-induced conformational changes in -CN-terthiophene thiolate film on GaAs(110),

V. Lazarescu, R. Scurtu, M. F. Lazarescu, A. M. Toader, E. Volanschi E. Santos, H. Jones, G. Goetz, P. Bauerle
Langmuir, 2009

 

Preparation and characterization of nitrogen-doped TiO2 nanoparticles by the laser pyrolysis of N2O-containing gas mixtures,

R. Alexandrescu, M. Scarisoreanu, I. Morjan, R. Birjega, C. Fleaca, C. Luculescu, I. Soare, O. Cretu, C. C. Negrila, M. Lazarescu, V. Ciupina
Applied Surface Science, 255, p. 5373–, 2009

 

Thin films of Cu(II)-o, o0-dihydroxy azobenzene nanoparticle-embedded polyacrylic acid (PAA) for nonlinear optical applications developed by matrix assisted pulsed laser evaporation,

C. Constantinescu, A. Emandi, C. Vasiliu, C. Negrila, C. Logofatu, C.Cotarlan, M.Lazarescu
(MAPLE. Applied Surface Science, 255, p. 5480–, 2009


Sunthesis and crystallization of Some Advanced Materials - Semiconductors and Alloys,

M. F. Lazarescu, A. S. Manea, C. Logofatu, C. C. Negrila
Edit. ELECTRA, 2009

 

Surface States- and Field-Effects at p- and n-dopped GaAs(111)A / solution interface,

R. Scurtu , N. Ionescu, M. Lazarescu, V. Lazarescu
Phys. Chem. Chem. Phys. , 11, p. 1765–, 2009

R. V. Ghita, V. Lazarescu, C. Logofatu, C. C. Negrila, M. F. Lazarescu
Electrical Characterization of thiols self-assembled layers on GaP structures
Mater. Sci. Semicond. Processing - accepted, ref. MSSP-D-08-00021, in print, in print, 2009

ARPXPS analysis of Silicon oxide films,

C. C. Negrila , C.. Cotarlan, F. Ungureanu, C. Logofatu, R. V. Ghita, M. F. Lazarescu
J. Optoelectronics and Adv.. Materials , 10(6), pp. 1379-1383, 2008

 

Angle-resolved XPS structural investigation of GaAs surfaces,

C. C. Negrila, C. Logofatu, R. V. Ghita, C. Cotarlan, F. Ungureanu, A. S. Manea, M. F. Lazarescu
J. Crystal Growth, 310, pp. 1576-1582, 2008

 

Properties of TiO2 thin films prepared by different techniques,

F. Ungureanu, R. Medianu, R. V. Ghita, C. C, Negrila, P. Ghita, A. S. Manea, M. F. Lazarescu
J. Optoelectronics and Adv.. Materials, 9(5), pp. 1457-1461, 2007

 

Spectral response of Au-Ti Scottky barrier on semi-insulating GaAs,

R. V. Ghita, C. Logofatu, C. Negrila, C. Cotirlan, P. Ghita, A. S. Manea, M. F. Lazarescu
Phys. Status Solidi A, 204(4) , pp. 1025-1029, 2007

 

XPS study of Ti/oxidized GaAs interface,

R. V. Ghita, C. Logofatu, C. Negrila, A. S. Manea, M. Cernea, V. Ciupina, M. F. Lazarescu
J. Optoelectronics and Adv.. Materials, 8(1) , pp. 31-36 , 2006

 

Hydrogen storage in Mg-Ni-Fe compounds prepared by melt spinning and ball milling,

P. Palade, S. Sartori, A. Maddalena, G. Principi, S La Russo, M. Lazarescu, G. Schinteie, V. Kuncser. G. Filoti
J. Alloys and Compounds, 415, p. 170–, 2006

 

Studies of ohmic contact and Schottky barriers on Au-Ge/GaAs and Au-Ti/GaAs,

R. V. Ghita, C. Logofatu, C. Negrila, A. S. Manea, M. Cernea, M. F. Lazarescu
J. Optoelectronics and Adv.. Materials, 7(6), pp. 3033-3037, 2005

 

Field Effects and Surface States in SHG at n-GaAs (hkl) Electrodes,

V. Lazarescu, R. Scurtu, M. F. Lazarescu, E. Santos, H. Jones, W. Schmickler
Electrochimica Acta. , 50, pp. 4830-4836, 2005

 

Second Harmonic Generation and impedance spectroscopy at n-GaAs (100) electrodes,

V. Lazarescu, M. F. Lazarescu, E. Santos, W. Schmickler
Electrochimica Acta , 49(24) , pp. 4231-4238, 2004

 

Second Harmonic Generation at the GaAs (111)-B/solution interfaces,

V. Lazarescu, M. F. Lazarescu, H. Jones, W. Schmickler
J. Electroanalitical Chemistry , 567 (2), pp. 257-261, 2004

 

" X-Ray Photoelectron Spectroscopy study on n-type GaAs. ",

R. V. Ghita, C. Negrila, A. S. Manea, C. Logofatu, M. Cernea, M. F. Lazarescu
J. of Optoelectronics and Adv. Mat, 5(4)., pp. 859-863, 2003

 

Bar-Configuration in Hall Measurements with GaAs,

R. V. Ghita, C. Logofatu, C. Negrila, M. F. Lazarescu, A. S. Manea, V. Ciupina
Journal of Optoelectronics and Advanced Materials, 5(1) , pp. 359-363, 2003

 

Chemical Deposited Pd on GaAs,

R. V. Ghita, M. Nedelcu, M. F. Lazarescu
Cryst Res. Technol. , 37(4) , pp. 323-328 , 2002

 

Bi2-xSbxTe3 thick thermoelectric films obtained by electrodeposition from hydrochloric acid solutions,

M. Nedelcu, M. Sima, A. S. Manea, M. F. Lazarescu, R. V. Ghita, F. Craciunoiu, T. Visan
Journal of Optoelectronics and Advanced Materials , 4 (1), pp. 107-114, 2002

 

Investigation of semi-insulating oxygen doped GaAs,

M. F. Lazarescu, D. Pantelica, A. S. Manea, R. V. Ghita, F. Negoita
J. Cryst. Growth. , 240, pp. 401-406, 2002

 

PbSe1-xTex thick thermoelectric films obtained by electrochemical deposition from aqueous solutions,

Nedelcu M., Sima M., Stoica T., Manea AS., Lazarescu M. F., Visan T
Journal of Optoelectronics and Advanced Materials, () p. , 3(4) , pp. 909-914, 2001

 

Singlecrystalline Semiconductor Materials,

M. F. Lazarescu, A. S. Manea, V. Lazarescu
Edit. ICPE, 2000

 

Structural analysis on polycrystalline CuGa1-xInxTe2 bulk quaternary compounds synthesized by a rapid cooling technique,

D. Gaburici, M. F. Lazarescu, A. S. Manea, V. Sandu

Cryst. Res. Technol. , 35 (3), pp. 265-270, 2000

 

On the lead determination in alkali halides by spectroscopic method,

C. Dan, V. Topa, M. F. Lazarescu
Cryst. Res. Technol. , 34 , pp. 891-895, 1999

 

Influence of the melt growth configuration on the structural properties of langasite crystals,

A. S. Manea, M. F. Lazarescu, I. Mateescu, G. Pop, C. Ghita
Ann. Sci. Mat. , 22 , pp. 735-738, 1997

 

A model of the metallic surface-emitting Second Harmonic Generator,

A. Popa, M. F. Lazarescu, R. Dabu, A. Stratan
IEEE Journal of Quantum Electronics , 33(9), pp. 1474-1480, 1997

 

Influence of some n-type InSb properties on the main parameters of infrared photoconductive detectors,

C. E. A. Grigorescu, S. A. Manea, M. F. Lazarescu, T. Botila, I. Munteanu, T. Necsoiu
Materials Science and Engineering , B 44, pp. 270-273, 1997

 

On the uniform composition of InxGa1-xSb (x= 0, 02) bulk crystals for special optoelectronic devices,

A. S. Manea, I. I. Munteanu, C. E. A. Grigorescu, M. F. Logofatu, M. F. Lazarescu
Optical Eng. , 35(5), pp. 1356-1359, 1996

 

The influence of the melt cooling rate on the properties of YIG single crystals grown by the flux method from sintered polycrystalline material,

M. FLazarescu, A. S. Manea, E. Elena
Cryst. Res. Technol. , 29(6), pp. 889-894, 1994

 

Highly homogeneous polycrystalline HgTe synthesis under pressure,

M. F. Lazarescu, A. S. Manea
Cryst. Res. Technol. , 29(1), pp. 39-43, 1994

 

Optical quality GaAs grown from quartz crucible,

M. F. Lazarescu, E. Elena, A. S. Manea, C. Timus, M. L. Pascu
Cryst. Res. Technol. , 28(4), pp. K 19-K23, 1993

 

Highly pure Gallium obtained by a simple technique,

V. Lazarescu, M. F. Lazarescu
Rev. Roum. Chimie, 23 (6) , pp. 861-864, 1978.

hm14

Updated: 31 ian 2012 - Ionel Stavarache: stavarache@infim.ro