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Novel nanostructured semiconductor materials based on Ge nanoparticles in different oxides for aplications in VIS-NIR photodetectors and nonvolatile memory devices.

Project Coordinator: National Institute of Materials Physics

Project Director : Dr. Magdalena Lidia Ciurea

Obiective Rezultate
Activitati
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Abstract

      The primary aim is to obtain novel nanostructured semiconductor materials based on Ge nanoparticles (nps) with optimized properties to be used in photodetectors for the visible and infrared (VIS-NIR) ranges, and also in nonvolatile (NV) memory devices. This aim will be realized in the following objectives:

      A) Preparation and characterization of nanostructured films based on Ge nps in SiO2, TiO2, HfO2, with optimized photoconductive and electrical properties;

      B) Preparation and complex characterization of experimental models for VIS-NIR photodetector and NV memory using the optimized materials;

      C) Fabrication of VIS-NIR photodetector and NV memory to prove experimentally the concepts of the project and its applications;

      D) Estimation of the economic impact.

      Based on the material research (Phase 1), and on the investigations of structures and experimental models (Phase 2), two prototypes will be fabricated in Phase 3, one for the VIS-NIR photodetector, and one for the NV memory, with corresponding technical specifications. Thus, we will prove that the novel nanostructured materials based on Ge nps obtained in this project are suitable for VIS-NIR photodetectors and NV memory devices. Also, the technical and economical analyses documentation and feasibility studies will be performed (Phase 4).

      The two devices will be integrated into a system for event identification and an automated test and measurement system for industrial applications and manufacturing devices will be realized.

      The results obtained by achieving the project objectives have a high level of originality and novelty. Therefore, the scientific results will be promoted in 5 papers in peer-reviewed journals, and in 7 communications at prestigious international conferences. The technological results will be the object of 3 patent applications.

      Young students will be involved in the project, and this will have a formative effect (Master Dissertations and/or PhD theses).

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Objectives

2012 Phase I: Preparation and characterization of nanostructured films based on Ge nanoparticles in SiO2, TiO2, HfO2, with optimized photoconductive and electrical properties.

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Activities

Stage

Preparation and characterization of nanostructured films based on Ge nanoparticles in SiO2, TiO2, HfO2, with optimized photoconductive and electrical properties.

Calendar
 

 

I

Activities

AI.1 Deposition of amorphous films of oxides, Ge and Ge-Oxide by magnetron sputtering and e-beam evaporation; study of thickness, composition, microstructure of films, and optimization of deposition parameters.

AI.2 Design of test samples (TS(a) and TS(b)) and technological process; optimization of cleanroom operations.

AI.3 Preparation of test samples.

AI.4 Study of electrical, photoconductive and optical properties for process optimisation: characterization of test samples.

AI.5 Setting-up the project web page.

20 dec 2012

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Results

2012

Published / submitted papers to ISI quated journals

1.“Multi-layers of interacting Ge nano-crystals in SiO2”,Ana-Maria Lepadatu, Ionel Stavarache, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea, submitted to Journal of Nanoparticle Research

2."New procedure for optimizing dye-sensitized solar cells", , Mihai Razvan Mitroi, Laurentiu Fara, Magdalena Lidia Ciurea, submitted to Solar Energy.

Papers presented to National and International Conferences

1.“Electrical properties related to the structure of films with Ge nanoparticles embedded in SiO2 matrix”, Magdalena Lidia Ciurea, Ana-Maria Lepadatu, Ionel Stavarache, Catalin Palade, Valentin S. Teodorescu, (prezentata oral - Drd. A-M Lepadatu) EMRS 2012 Fall Meeting, 17 – 21 septembrie 2012, Varsovia, Polonia.

2.“Structure and electrical characterization of GeSi nanostructured films”, Ana-Maria Lepadatu, Ionel Stavarache, Adrian Valentin Maraloiu, Catalin Palade, Valentin Serban Teodorescu, Magdalena Lidia Ciurea, EMRS 2012 Fall Meeting, 17 – 21 septembrie 2012, Varsovia, Polonia.

3.“Electrical behaviour related to structure of nanostructured GeSi films annealed at 700 C”, Ana-Maria Lepadatu, Stavarache Ionel, Adrian Maraloiu, Palade Catalin, Teodorescu Valentin Serban, Ciurea Lidia Magdalena, International Semiconductor Conference, publicata in Proceedings vol.1, p. 109-112, CAS 2012, 15 – 17 octombrie, Sinaia

4.“Transport mechanisms in SiO2 films with embedded germanium nanoparticles”, Catalin Palade, Ana-Maria Lepadatu, Ionel Stavarache, Adrian V. Maraloiu, Valentin S. Teodorescu, Magdalena Lidia Ciurea, International Semiconductor Conference, publicata in Proceedings vol.1, p. 91-94, CAS 2012, 15 – 17 octombrie, Sinaia.

5.“Electrical and structural properties of nanostructured GeSi films”, A.-M. Lepadatu, I. Stavarache, A. Maraloiu, C. Palade, V. S. Teodorescu, L. M. Ciurea, 3rd International Colloquium “Physics of Materials” (PM–3), 15 – 16 noiembrie 2012, Bucuresti.

6.“Electrical behaviour related to the structure of SiO2 films with embedded Ge nanoparticles”, I. Stavarache, C. Palade, A. M. Lepadatu, A. V. Maraloiu, V. S. Teodorescu, M. L. Ciurea, 3rd International Colloquium “Physics of Materials” (PM–3), 15 – 16 noiembrie 2012, Bucuresti

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hm14

Updated: 31 ian 2012 - Ionel Stavarache: stavarache@infim.ro

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