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2011

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STUDY  OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE  PROPERTIES
Lepadatu, AM; Stavarache, I; Stoica, TF, et  al.
DIGEST JOURNAL OF NANOMATERIALS AND  BIOSTRUCTURES, 6 (1), 67-73, 2011.

Numerical  analysis of J-V characteristics of a polymer solar cell
Mitroi, MR; Iancu, V; Fara, L, et al.
PROGRESS  IN PHOTOVOLTAICS, 19 (3), 301-306, 2011.

Calculation  of the quantum efficiency for the absorption on confinement levels in quantum  dots
A Iancu, V; Mitroi, MR; Lepadatu, AM, et al.
A  JOURNAL OF NANOPARTICLE RESEARCH, 13 (4), 1605-1612, 2011.

Stress-induced  traps in multilayered structures
Ciurea, ML; Lazanu, S;  Stavarache, I, et al.
JOURNAL OF APPLIED  PHYSICS, 109 (1) A  Article Number: 013717, 2011.

Structural  investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
A Stavarache, I; Lepadatu, AM; Gheorghe, NG, et al.
A  JOURNAL OF NANOPARTICLE RESEARCH, 13 (1), 221-232, 2011.

Modelling the transient processes produced under heavy particle irradiation
 Lazanu, S; Lazanu, I; Ciobanu, G
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Volume: 269 (4),  498-503, 2011.

Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy
Stoica Toma; Calarco Raffaella
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,Volume: 17, Issue: 4, Pages: 859-868, DOI: 10.1109/JSTQE.2010.2092416, Published: JUL-AUG 2011

MBE growth optimization of topological insulator Bi(2)Te(3) films
Krumrain J.; Mussler G.; Borisova S.; et al.
JOURNAL OF CRYSTAL GROWTH,Volume: 324, Issue: 1, Pages: 115-118, DOI: 10.1016/j.jcrysgro.2011.03.008, Published: JUN 1 2011

Enhanced Raman Scattering of Ultramarine on Au-coated Ge/Si-nanostructures
Klyachkovskaya Elena; Strekal Natalia; Motevich Inna; et al.
PLASMONICS,Volume: 6, Issue: 2, Pages: 413-418, DOI: 10.1007/s11468-011-9219-2, Published: JUN 2011

Properties of uniform diameter InN nanowires obtained under Si doping
Gotschke T.; Schaefer-Nolte E. O.; Caterino R.; et al.
NANOTECHNOLOGY,Volume: 22, Issue: 12, ,Article Number: 125704, DOI: 10.1088/0957-4484/22/12/125704, Published: MAR 25 2011

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
Gotschke T.; Schumann T.; Limbach F.; et al.
APPLIED PHYSICS LETTERS,Volume: 98, Issue: 10, ,Article Number: 103102, DOI: 10.1063/1.3559618, Published: MAR 7 2011

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
Schumann T.; Gotschke T.; Limbach F.; et al.
NANOTECHNOLOGY,Volume: 22, Issue: 9, ,Article Number: 095603, DOI: 10.1088/0957-4484/22/9/095603, Published: MAR 4 2011

Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy
Limbach F.; Gotschke T.; Stoica T.; et al.
JOURNAL OF APPLIED PHYSICS,Volume: 109, Issue: 1, ,Article Number: 014309, DOI: 10.1063/1.3530634, Published: JAN 1 2011

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2010

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Electrical  behavior of multi-walled carbon nanotube network embedded in amorphous silicon  nitride
Stavarache, I; Lepadatu, AM; Teodorescu, VS, et  al.
NANOSCALE RESEARCH LETTERS,A 6 (1) A  Article  Number: 88, 2010.

Quantum Confinement in Nanometric Structures
Ciurea, ML; Iancu,  V
Conference Information: International Workshops on  New Trends in Science and Technology (NTST 08)/ Fractional Differentiation and  its Applications (FDA08), Date: NOV, 2008 Cankaya  Univ Ankara TURKEY
NEW TRENDS IN  NANOTECHNOLOGY AND FRACTIONAL CALCULUS APPLICATIONS, 57-67, 2010.

The  influence of shape and potential barrier on confinement energy levels in quantum  dots
Lepadatu, AM; Stavarache, I; Ciurea, ML, et  al.
JOURNAL OF APPLIED PHYSICS,A 107 (3)  A  Article Number: 033721, 2010.

KINETICS OF DEFECTS IN LOW TEMPERATURE SEMICONDUCTOR DETECTORS AND DIRECT DARK MATTER SEARCH
 Lazanu, I; Lazanu, S
Conference Information: Annual Scientific Conference of the Faculty-of-Physics of the University-of-Bucharest, Date: JUN 05, 2009 Bucharest Magurele ROMANIA
 ROMANIAN REPORTS IN PHYSICS   Volume: 62 ( 2),  309-318, 2010.

Transient processes induced by heavy projectiles in silicon
 Lazanu, I; Lazanu, S
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Volume: 268 (13),  2241-2245, 2010.

Universal conductance fluctuations and localization effects in InN nanowires connected in parallel
Alagha S.; Hernandez S. Estavez; Bloemers C.; et al.
JOURNAL OF APPLIED PHYSICS,Volume: 108, Issue: 11, ,Article Number: 113704, DOI: 10.1063/1.3516216, Published: DEC 1 2010

Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering
Cusco R.; Domenech-Amador N.; Artus L.; et al.
APPLIED PHYSICS LETTERS,Volume: 97, Issue: 22, ,Article Number: 221906, DOI: 10.1063/1.3520643, Published: NOV 29 2010

Enhanced light scattering of the forbidden  longitudinal optical phonon mode studied by micro-Raman spectroscopy on  single InN nanowires
Schaefer-Nolte E. O.; Stoica T.; Gotschke T.; et al.
NANOTECHNOLOGY,Volume: 21, Issue: 31, ,Article Number: 315702, DOI: 10.1088/0957-4484/21/31/315702, Published: AUG 6 2010

Morphology and optical properties of Mg doped GaN nanowires in dependence of growth temperature
Limbach F.; Schaefer-Nolte E. O.; Caterino R.; et al.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Volume: 12, Issue: 6, Pages: 1433-1437, Published: JUN 2010

Highly polarized Raman scattering anisotropy in single GaN nanowires
Schaefer-Nolte E. O.; Stoica T.; Gotschke T.; et al.
APPLIED PHYSICS LETTERS,Volume: 96, Issue: 9, ,Article Number: 091907, DOI: 10.1063/1.3343347, Published: MAR 1 2010

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2009

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INVESTIGATION  OF ELECTRICAL PROPERTIES OF CARBON NANOTUBES
Ciurea, ML;  Stavarache, I; Lepadatu, AM, et al.
Conference Information: 32nd International Semiconductor Conference, Date: OCT 12-14, 2009 Sinaia ROMANIA
CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2,  PROCEEDINGS, 121-124,A 2009.

Semiconductor  detectors for high radiation fields: microscopic processes in materials and the  control of device parameters
Lazanu, S; Ciurea, ML; Lazanu,  I
JOURNAL OF OPTOELECTRONICS AND ADVANCED  MATERIALS, 11 (12), 2150-2154, 2009.

DEFECT PRODUCTION IN SILICON AND GERMANIUM BY LOW TEMPERATURE IRRADIATION
 Lazanu, S; Lazanu, I; Lepadatu, A, et al.
Conference Information: 32nd International Semiconductor Conference, Date: OCT 12-14, 2009 Sinaia ROMANIA
 CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS,  379-382, 2009.

Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters
 Lazanu, S; Ciurea, ML; Lazanu, I
 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS   Volume: 11 (12),  2150-2154, 2009.

ENERGY DEPOSITED BY RADIATION IN SOLIDS: REGISTRATION PHYSICS
  Lazanu, I; Lazanu, S
 ROMANIAN REPORTS IN PHYSICS   Volume: 61 (4),  689-699, 2009.

Point and extended defects in irradiated silicon and consequences for detectors
 Lazanu, S; Ciurea, ML; Lazanu, I
Conference Information: International Conference on Extended Defects in Semiconductors (EDS 2008), Date: SEP 14-19, 2008 Poitiers FRANCE
 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8   Volume: 6 (8),  1974-1978, 2009.

FROM NUCLEAR MATTER TO STRANGE QUARK MATTER - SOME CHARACTERISTICS OF THE INTERACTIONS IN ORDINARY MATTER
 Lazanu, I; Chera, M; Iordanescu, R, et al.
Conference Information: Annual Scientific Conference of the Faculty-of-Physics of the University-of-Bucharest, Date: JUN 06, 2008 Bucharest ROMANIA
 ROMANIAN REPORTS IN PHYSICS   Volume: 61 (2),  215-221, 2009.

Atomic force microscopy study of TiO(2) sol-gel films thermally treated under NH(3) atmosphere
Trapalis C.; Todorova N.; Anastasescu M.; et al.
Conference:6th Symposium on Thin Films for Large Area Electronics held at the E-MRS Spring MeetingLocation: Strasbourg, FRANCEDate: MAY 26-30, 2008
Sponsor(s): E-MRS
THIN SOLID FILMS,Volume: 517, Issue: 23, Pages: 6243-6247, DOI: 10.1016/j.tsf.2009.02.070, Published: OCT 1 2009

Formation of GaN nanodots on Si (111) by droplet nitridation
Debnath R. K.; Stoica T.; Besmehn A.; et al.
JOURNAL OF CRYSTAL GROWTH,Volume: 311, Issue: 13, Pages: 3389-3394, DOI: 10.1016/j.jcrysgro.2009.04.025, Published: JUN 15 2009

Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
Jeganathan K.; Debnath R. K.; Meijers R.; et al.
JOURNAL OF APPLIED PHYSICS,Volume: 105, Issue: 12, ,Article Number: 123707, DOI: 10.1063/1.3148862, Published: JUN 15 2009

Laterally ordered 2-D arrays of Si and Ge nanocrystals within SiO(2) thin layers for application in non-volatile memories
Nassiopoulou A. G.; Olzierski A.; Tsoi E.; et al.
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY,Volume: 6, Issue: 1-2, Pages: 18-34, DOI: 10.1504/IJNT.2009.021705, Published: 2009

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2008

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Point  and extended defects in irradiated silicon and consequences for detectors
Lazanu, S; Ciurea, ML; Lazanu, I
Conference Information: International Conference on Extended Defects in Semiconductors  (EDS 2008), Date: SEP 14-19, 2008 Poitiers  FRANCE
PHYSICA STATUS SOLIDI C -  CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 6 (8), 1974-1978, 2009.

MODELING  OF TRAP DISCHARGING PROCESSES IN MULTIPLE QUANTUM WELL STRUCTURES
Ciurea, ML; Iancu, V; Stavarache, I, et al.
Conference  Information: 31st International Semiconductor Conference  2008, Date: OCT 13-15, 2008 Sinaia ROMANIA
CAS: 2008 INTERNATIONAL SEMICONDUCTOR  CONFERENCE, PROCEEDINGS, 81-84, 2008.

Morphology  of Si nanocrystallites embedded in SiO2 matrix
Teodorescu,  VS; Ciurea, ML; Iancu, V, et al.
JOURNAL OF  MATERIALS RESEARCH, 23 (11), 2990-2995, 2008.

Polypyrrole  - porous silicon nanocomposites
Popa, C; Turcu, R;  Craciunescu, I, et al.
Conference Information: 5th  Conference on Isotopic and Molecular Processes, Date: SEP 20-22, 2007 Cluj Napoca ROMANIA
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 10 (9), 2319-2324, 2008.

Defects  in silicon: From bulk crystals to nanostructures
Ciurea, ML;  Iancu, V; Lazanu, S, et al.
ROMANIAN REPORTS IN  PHYSICS, 60 (3), 735-748, 2008.

Correlation between ionization and displacement damage in silicon detectors for energies of interest in astroparticle and particle physics applications
  Lazanu, I; Lazanu, S
Conference Information: Annual Scientific Conference of the Faculty-of-Physics of the University-of-Bucharest, Date: JUN 01, 2007 Bucharest ROMANIA
 ROMANIAN REPORTS IN PHYSICS   Volume: 60 (2),  381-387, 2008.

Analytical approximations of the NIEL in semiconductor detectors for HEP
  Lazanu, I; Lazanu, S
 ROMANIAN REPORTS IN PHYSICS   Volume: 60 (1),  71-78, 2008.

Hydroxyapatite films obtained by sol-gel and sputtering
Stoica T. F.; Morosanu C.; Slav A.; et al.
THIN SOLID FILMS,Volume: 516, Issue: 22, Pages: 8112-8116, DOI: 10.1016/j.tsf.2008.04.071, Published: SEP 30 2008

Investigation on the nitrogen doping of multilayered, porous TiO(2) thin films
Gartner M.; Osiceanu P.; Anastasescu M.; et al.
THIN SOLID FILMS,Volume: 516, Issue: 22, Pages: 8184-8189, DOI: 10.1016/j.tsf.2008.04.027, Published: SEP 30 2008

Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires
Stoica Toma; Sutter Eli; Meijers Ralph J.; et al.
SMALL,Volume: 4, Issue: 6, Pages: 751-754, DOI: 10.1002/smll.200700936, Published: JUN 2008

Doped sol-gel TiO2 films for biological applications
Gartner M.; Trapalis C.; Todorova N.; et al.
BULLETIN OF THE KOREAN CHEMICAL SOCIETY,Volume: 29, Issue: 5, Pages: 1038-1042, Published: MAY 20 2008

Investigation on localized states in GaN nanowires
Polenta L.; Rossi M.; Cavallini A.; et al.
ACS NANO,Volume: 2, Issue: 2, Pages: 287-292, DOI: 10.1021/nn700386w, Published: FEB 2008

 

Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization
Buda Ma; Iordache G.; Mokkapati S.; et al.
JOURNAL OF APPLIED PHYSICS, Volume: 104, Issue: 2, Article Number: 023713, DOI: 10.1063/1.2959681 ,Published: JUL 15 2008

Investigation of metal-oxide semiconductor field-effect transistor-like Si/SiO2/(nano)crystalline PbS heterostructures
Stancu V.; Buda M.; Pintilie L.; et al.
THIN SOLID FILMS,Volume: 516, Issue: 12, Pages: 4301-4306, DOI: 10.1016/j.tsf.2007.11.116, Published: APR 30 2008

Capacitance-voltage characteristics of heterostructures with high leakage currents
Goldenblum A.; Stancu V.; Buda M.; et al.
JOURNAL OF APPLIED PHYSICS,Volume: 103, Issue: 5, Article Number: 056107, DOI: 10.1063/1.2844210 ,Published: MAR 1 2008

Investigation of nanocrystalline Pbs/n-Si heterostructures for optoelectronic applications
Buda Ma.; Stancu V.; Iordache G.; et al.
Conference:Symposium on Semiconductor Nanostructures towards Electronic and  Optoelectronic Device Applications held at the 2007 EMRS Spring MeetingLocation: Strasbourg, FRANCEDate: MAY 28-JUN 01, 2007
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Volume: 147, Issue: 2-3, Pages: 284-288, DOI: 10.1016/j.mseb.2007.09.070, Published: FEB 15 2008

Characterization of high performance PbS photodetectors
Buda M.; Iordache G.; Stantcu V.; et al.
Conference:8th International Balkan Workshop on Applied PhysicsLocation: Constanta, ROMANIADate: JUL 05-07, 2007
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, Volume: 10, Issue: 2, Pages: 306-310, Published: FEB 2008

Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Buda M.; Iordache G.; Mokkapati S.; et al.
Conference:8th International Balkan Workshop on Applied PhysicsLocation: Constanta, ROMANIADate: JUL 05-07, 2007
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Volume: 10 ,Issue: 2 ,Pages: 323-326 ,Published: FEB 2008

 

STRUCTURAL AND OPTICAL PROPERTIES OF SOL-GEL DERIVED  HYDROXYAPATITE FILMS IN DIFFERENT STAGES OF CRYSTALLIZATION AND  DENSIFICATION PROCESSES
Tionica Stoica; Gartner Mariuca; Ianculescu Adelina; et al.
Editor(s): Mathur S; Singh M; Ohji T; et al.
Conference:32nd International Conference on Advanced Ceramics and CompositesLocation: Daytona Beach, FLDate: JAN 27-FEB 01, 2008
Sponsor(s): Amer Ceram Soc; ACerS Engn Ceram Div
NANOSTRUCTURED MATERIALS AND NANOTECHNOLOGY II, Book Series: CERAMIC ENGINEERING AND SCIENCE PROCEEDINGS, Volume: 29, Issue: 8, Pages: 209-216, Published: 2009

Hydroxyapatite films obtained by sol-gel and sputtering
Stoica T. F.; Morosanu C.; Slav A.; et al.
THIN SOLID FILMS, Volume: 516 , Issue: 22 , Pages: 8112-8116 , DOI: 10.1016/j.tsf.2008.04.071 , Published: SEP 30 2008

The CMS experiment at the CERN LHC
Chatrchyan S.; Hmayakyan G.; Khachatryan V.; et al.
Group CMS Collaboration
JOURNAL OF INSTRUMENTATION, Volume: 3 , , Article Number: S08004 , DOI: 10.1088/1748-0221/3/08/S08004 , Published: AUG 2008

Rough Bioglass films prepared by magnetron sputtering
Slav A.; Ianculescu A.; Morosanu C.; et al.
Editor(s): Daculsi G; Layrolle P
Conference:20th International Symposium on Ceramics in MedicineLocation: Nantes, FRANCEDate: OCT 24-26, 2007
Sponsor(s): Int Soc Ceram Med
BIOCERAMICS, VOL 20, PTS 1 AND 2, Book Series: KEY ENGINEERING MATERIALS , Volume: 361-363 , Pages: 245-248 , Part: Part 1-2 , Published: 2008

2007

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Some  contributions to the understanding of the puzzle of physical processes of  degradation in irradiated silicon
Lazanu, S; Lazanu, I;  Ciurea, ML
Conference Information: International  Semiconductor Conference, Date: OCT 15-17, 2007  Sinaia ROMANIA
CAS 2007 INTERNATIONAL  SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 319-322, 2007.

Why  the energy levels observed in electrical transport, phototransport and  photoluminescence are different?
Ciurea, ML; Iancu,  V
Conference Information: International Semiconductor  Conference, Date: OCT 15-17, 2007 Sinaia  ROMANIA
CAS 2007 INTERNATIONAL  SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 41-44, 2007.

Trapping  phenomena in silicon-based nanocrystalline semiconductors
Ciurea, ML; Iancu, V; Mitroi, MR
Conference Information: 3rd Nano and Giga Forum, Date: 2007  Arizona State Univ Tempe AZ
SOLID-STATE  ELECTRONICS, 51 (10), 1328-1337, 2007.

Phototransport  and photoluminescence in nanocrystalline porous silicon
 Iancu, V; Ciurea, ML; Stavarache, I, et al.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9 (8), 2638-2643, 2007.

Percolation  phenomena in Si-SiO2 nanocomposite films
Stavarache, I;  Ciurea, ML
JOURNAL OF OPTOELECTRONICS AND  ADVANCED MATERIALS, 9 (8), 2644-2647, 2007.

Some contributions to the understanding of the puzzle of physical processes of degradation in irradiated silicon
 Lazanu, S; Lazanu, I; Ciurea, ML
Conference Information: International Semiconductor Conference, Date: OCT 15-17, 2007 Sinaia ROMANIA
 CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS,  319-322, 2007.

Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
  Lazanu, S; Lazanu, I
Conference Information: 6th International Conference on Radiation Effects on Semiconductor Materials, Detectors, and Devices, Date: OCT 10-13, 2006 Florence ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 583 (1),  165-168, 2007.

Correlation between radiation processes in silicon and long-time degradation of detectors for high-energy physics experiments
 Lazanu, S; Lazanu, I
Conference Information: 10th International Symposium on Radiation Physics, Date: SEP 17-22, 2006 Univ Coimbra Coimbra PORTUGAL
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 580 (1),  46-49, 2007.

New aspects of the contribution of primary defects of silicon to long-time degradation of detectors operating in high fields of radiation
 Lazanu, S; Lazanu, I
Conference Information: 5th International Romanian Conference on Advanced Materials, Date: SEP 11-14, 2006 Bucharest Magurele ROMANIA
 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS   Volume: 9 ( 6),  1839-1842, 2007.

Primary defects in silicon: existence, characteristics, and their role after high fluence irradiation
 Lazanu, S; Lazanu, I; Ciupina, V, et al.
Conference Information: 7th International Balkan Workshop on Applied Physics, Date: JUL 05-07, 2006 Constanta ROMANIA
 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS   Volume: 9 (4),  814-817, 2007.

Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy
 Lazanu, I; Lazanu, S
Conference Information: 10th Pisa Meeting on Advanced Detectors, Date: MAY 21-27, 2006 La Biodola ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 572 ( 1),  297-299, 2007.

Two-dimensional arrays of self-organized Ge islands obtained by chemical vapor deposition on pre-patterned silicon substrates
Stoica T.; Shushunova V.; Dais C.; et al.
NANOTECHNOLOGY,Volume: 18, Issue: 45, ,Article Number: 455307, DOI: 10.1088/0957-4484/18/45/455307, Published: NOV 14 2007

Ge dots embedded in silicon dioxide using sol-gel deposition
Stoica T. F.; Gartner M.; Teodorescu V. S.; et al.
Conference:3rd International conference on Amorphous and Nanostructured ChalcogenidesLocation: Brasov, ROMANIADate: JUL 02-06, 2007
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Volume: 9, Issue: 10, Pages: 3271-3274, Published: OCT 2007

Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy
Calarco Raffaella; Meijers Ralph J.; Debnath Ratan K.; et al.
NANO LETTERS,Volume: 7, Issue: 8, Pages: 2248-2251, DOI: 10.1021/nl0707398, Published: AUG 2007

Franz-Keldysh effect in GaN nanowires
Cavallini A.; Polenta L.; Rossi M.; et al.
NANO LETTERS,Volume: 7, Issue: 7, Pages: 2166-2170, DOI: 10.1021/nl070954o, Published: JUL 2007

Growth and properties of SiGe structures obtained by selective epitaxy on finite areas
Vescan L.; Stoica T.; Sutter E.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,Volume: 87, Issue: 3, Pages: 485-490, DOI: 10.1007/s00339-007-3917-9, Published: JUN 2007

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
Debnath R. K.; Meijers R.; Richter T.; et al.
APPLIED PHYSICS LETTERS,Volume: 90, Issue: 12, ,Article Number: 123117, DOI: 10.1063/1.2715119, Published: MAR 19 2007

Nanoscale imaging of surface piezoresponse on GaN epitaxial layers
Stoica T.; Calarco R.; Meijers R.; et al.
APPLIED SURFACE SCIENCE,Volume: 253, Issue: 9, Pages: 4300-4306, DOI: 10.1016/j.apsusc.2006.09.039, Published: FEB 28 2007

Assembly of ordered carbon shells on GaN nanowires
Sutter Eli; Sutter Peter; Calarco Raffaella; et al.
APPLIED PHYSICS LETTERS,Volume: 90, Issue: 9, ,Article Number: 093118, DOI: 10.1063/1.2710189, Published: FEB 26 2007

CHEMICAL VAPOUR DEPOSITION OF REGIMENTED Ge ISLANDS ON TEMPLATED Si (100) SUBSTRATES
Gruetzmacher D.; Stoica T.; Shushunova V.
Editor(s): Borisenko VE; Gaponenko SV; Gurin VS
Conference:International Conference on Physics, Chemistry and Application of NanostructuresLocation: Minsk, BYELARUSDate: MAY 22-25, 2007
Sponsor(s): Belarusian State Univ Informat & Radioelect, Minist Educ Belarus; Univ Mediterranee Aix Marseille II; LG Elect;  Profess Radio Syst; EPAM Syst; Basic Res Fdn Belarus
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES,Pages: 427-430, DOI: 10.1142/9789812770950_0095, Published: 2007

 

Electrical characteristics of nano-PbS/SiO2/Si heterostructures obtained by chemical bath method
Goldenblum A.; Stancu V.; Buda M.; et al.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Volume: 9 ,Issue: 12 ,Pages: 3795-3802 ,Published: DEC 2007

A pillar-shaped antifuse-based silicon chemical sensor and actuator
Kovalgin Alexey Y.; Holleman Jisk; (Gigi) Iordache Gheorghe
IEEE SENSORS JOURNAL,Volume: 7 ,Issue: 1-2 ,Pages: 18-27 ,DOI: 10.1109/JSEN.2006.888602 ,Published: JAN-FEB 2007

Comparative characterization of PbS macro- and nano-crystalline photoresistive detectors
Iordache G.; Buda M.; Stancu V.; et al.
Book Group IEEE
Conference:International Semiconductor ConferenceLocation: Sinaia, ROMANIADate: OCT 15-17, 2007
Sponsor(s): Natl Inst Res & Dev Microtechnol; Romanian  Acad; Electrochem Soc; IEEE Electron Devices Soc; Minist Educ, Res & Youth; IEEE Romania Sect; Elect Device Chapter
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS,Pages: 199-202 , Published: 2007

A comparative study of micro crystalline and nanocrystalline lead sulfide based PbS/SiO2/Si heterostructures
Stancu V.; Pentia E.; Goldenblum A.; et al.
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY,Volume: 10 ,Issue: 1 ,Pages: 53-66 ,Published: 2007

 

Thickness dependence of crystallization process for hydroxyapatite thin films
Mercioniu I.; Ciuca S.; Pasuk I.; et al.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, Volume: 9 , Issue: 8 , Pages: 2535-2538 , Published: AUG 2007

CMS physics technical design report, volume II: Physics performance
Bayatian G. L.; Chatrchyan S.; Hmayakyan G.; et al.
Group CMS Collaboration
JOURNAL OF PHYSICS G-NUCLEAR AND PARTICLE PHYSICS, Volume: 34 , Issue: 6 , Pages: 995-1579 , DOI: 10.1088/0954-3899/34/6/S01 , Published: JUN 2007

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2006

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Quantum  confinement modeling of electrical and optical processes in nanocrystalline  silicon
Ciurea, ML; Iancu, V; Stavarache, I
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, 2156-2160, 2006.

Electronic  transport in Si-SiO2 nanocomposite films
Ciurea, ML;  Teodorescu, VS; Iancu, V, et al.
CHEMICAL  PHYSICS LETTERS, 423, 225-228, 2006.

The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation
 Lazanu, I; Lazanu, S
  PHYSICA SCRIPTA   Volume: 74 (2),  201-207, AUG 2006.

Ge dots embedded in SiO2 obtained by oxidation of Si/Ge/Si nanostructures
Stoica T.; Sutter E.
NANOTECHNOLOGY,Volume: 17, Issue: 19, Pages: 4912-4916, DOI: 10.1088/0957-4484/17/19/022, Published: OCT 14 2006

Photoluminescence and intrinsic properties of MBE-grown InN nanowires
Stoica Toma; Meijers Ralph J.; Calarco Raffaella; et al.
NANO LETTERS,Volume: 6, Issue: 7, Pages: 1541-1547, DOI: 10.1021/nl060547x, Published: JUL 12 2006

Growth and characterization of high density stoichiometric SiO2 dot arrays on Si through an anodic porous alumina template
Kokonou M; Nassiopoulou AG; Giannakopoulos KP; et al.
NANOTECHNOLOGY,Volume: 17, Issue: 9, Pages: 2146-2151, DOI: 10.1088/0957-4484/17/9/011, Published: MAY 14 2006

MBE growth optimization of InN nanowires
Stoica T; Meijers R; Calarco R; et al.
JOURNAL OF CRYSTAL GROWTH,Volume: 290, Issue: 1, Pages: 241-247, DOI: 10.1016/j.jcrysgro.2005.12.106, Published: APR 15 2006

GaN-nanowhiskers: MBE-growth conditions and optical properties
Meijers R; Richter T; Calarco R; et al.
JOURNAL OF CRYSTAL GROWTH,Volume: 289, Issue: 1, Pages: 381-386, DOI: 10.1016/j.jcrysgro.2005.11.117, Published: MAR 15 2006

 

Low-power, antifuse-based silicon chemical sensor on a suspended membrane
Kovalgin A. Y.; Holleman J.; Iordache G.; et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,Volume: 153 ,Issue: 9 ,Pages: H181-H188 ,DOI: 10.1149/1.2217262 ,Published: 2006

2005

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Quantum  confinement in the photoluminescence of nanocrystalline porous silicon
Stavarache, I; Ciurea, ML; Iancu, V
Conference Information: International Semiconductor Conference, Date: OCT 03-05, 2005 Sinaia ROMANIA
CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE VOL 1 AND  2, 55-58, 2005.

Quantum  confinement in nanocrystalline silicon
Ciurea,  ML
Conference Information: 17th European Conference on  Atomic and Molecular Physics of Ionized Gases, Date: SEP 01-05, 2004 Constanta ROMANIA
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7 (5), 2341-2346, 2005.

Development of radiation tolerant semiconductor detectors for the Super-LHC
 Moll, M; Adey, J; Al-Ajili, A, et al.
Conference Information: 6th International Workshop on Radiation Imaging Detectors, Date: JUL 25-29, 2004 Univ Glasgow Glasgow SCOTLAND
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 546 (1-2),  99-107, 2005.

Radiation-hard semiconductor detectors for SuperLHC
 Bruzzi, M; Adey, J; Al-Ajili, A, et al.
Conference Information: 5th International Symposium on Development and Application of Semiconductor Tracking Detectors, Date: JUN 14-17, 2004 Hiroshima JAPAN
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 541 ( 1-2),  189-201, 2005.

Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions
 Lazanu, I; Lazanu, S
 PHYSICA SCRIPTA   Volume: 71 (1,  31-38, JAN 2005.

Properties of high-porosity sol-gel derived indium-tin oxide films
Stoica TF; Gartner M; Stoica T; et al.
Conference:17th European Conference on Atomic and Molecular Physics of Ionized GasesLocation: Constanta, ROMANIADate: SEP 01-05, 2004
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Volume: 7, Issue: 5, Pages: 2353-2358, Published: OCT 2005

Size-dependent photoconductivity in MBE-grown GaN-nanowires
Calarco R; Marso M; Richter T; et al.
NANO LETTERS,Volume: 5, Issue: 5, Pages: 981-984, DOI: 10.1021/nl0500306, Published: MAY 2005

Piezoresponse force microscopy for imaging of GaN surfaces
Calarco R; Meijers R; Stoica T; et al.
Conference:International Workshop on Nitrides Semiconductors (IWN 2004)Location: Pittsburgh, PADate: JUL 19-23, 2004
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,Volume: 202, Issue: 5, Pages: 785-789, DOI: 10.1002/pssa.200461298, Published: APR 2005

Two-dimensional arrays of ordered, highly dense and ultra small Ge nanocrystals on thin SiO2 layers
Berbezier I; Karmous A; Ronda A; et al.
Editor(s): Nassiopoulou AG; Papanikolaou N; Tsamis C
Conference:2nd Conference on Micorelectronics, Microsystems and NanotechnologyLocation: Athens, GREECEDate: NOV 14-17, 2004
Sponsor(s): NCSR Demokritos; IMEL; SINANO Network; PHANTOMS  IST Nanoelect Network; PRAXI Help Foward; Photronics Inc; Theta  Microelect; Interactive Ltd
Second Conference on Microelectronics, Microsystems and Nanotechnology,Book Series: JOURNAL OF PHYSICS CONFERENCE SERIES, Volume: 10, Pages: 73-76, DOI: 10.1088/1742-6596/10/1/018, Published: 2005

 

A versatile micro-scale silicon sensor/actuator with low power consumption
Kovalgin AY; Holleman J; Iordache G
Book Group IEEE
Conference:4th IEEE Conference on SensorsLocation: Irvine, CADate: OCT 31-NOV 03, 2005
Sponsor(s): IEEE Sensors Council
2005 IEEE SENSORS, VOLS 1 AND 2,Book Series: IEEE Sensors ,Pages: 1225-1228 ,Published: 2005

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Influence  of crystal growth technology on the tolerance to radiation of silicon for  detectors at future accelerators
Lazanu, S; Lazanu, I;  Ciurea, ML
Conference Information: 27th International  Semiconductor Conference (CAS), Date: OCT 04-06,  2004 Sinaia ROMANIA
2004 International  Semiconductor Conference, Vols 1and 2, Proceedings, 419-422, 2004.

Microstructure  of Si/SiO2 nanocomposite films
Teodorescu, VS; Ciurea, ML;  Iancu, V, et al.
Conference Information: 27th  International Semiconductor Conference (CAS), Date: OCT 04-06, 2004 Sinaia ROMANIA
2004 International Semiconductor Conference, Vols 1and 2,  Proceedings, 59-62,A 2004.

Conduction  mechanisms in silicon-based nanocomposites
Iancu, V;  Draghici, M; Jdira, L, et al.
JOURNAL OF  OPTOELECTRONICS AND ADVANCED MATERIALS, 6 (1), 53-56, 2004.

Electrical  behavior of Si/SiO2 nanocomposite films
Iancu, V; Jdira, L;  Draghici, M, et al.
Conference Information: 26th  International Semiconductor Conference (CAS 2003), Date: SEP 28-OCT 02, 2003 Sinaia ROMANIA
2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2,  PROCEEDINGS, 83-86,A 2003.

Modeling  of optical charging spectroscopy investigation of trapping phenomena in  nanocrystalline porous silicon
Iancu, V; Ciurea, ML;  Draghici, M
JOURNAL OF APPLIED PHYSICS, 94 (1), 216-223, 2003

Coupled  confinement effect on the photoluminescence and electrical transport in porous  silicon
Ciurea, ML; Draghici, M; Iancu, V, et  al.
Conference Information: International Conference on  Luminescence and Optical Spectroscopy of Condensed Matter, Date: AUG 24-29, 2002 BUDAPEST HUNGARY
JOURNAL OF LUMINESCENCE, 102, 492-497, 2003.

Non-equilibrium  electronic processes in nanocrystalline silicon
Ciurea, ML;  Iancu, V; Draghici, M, et al.
Conference Information: Conference on Advanced Topics in Optoelectronics,  Microelectronics, and Nanotechnologies, Date: NOV  21-23, 2002 BUCHAREST ROMANIA
ADVANCED  TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES, 5227, 267-273, 2002.

Carriers  transport in semiconducting films formed by crystalline nanodots
Iancu, V; Ciurea, ML; Draghici, M
Conference Information: International Semiconductor Conference, Date: OCT 09-13, 2001 SINAIA ROMANIA
2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2,  PROCEEDINGS, 95-98,A 2001.
 

Quantum  confinement model for phototransport processes in nanocrystalline porous  silicon
Ciurea, ML; Stavarache, I; Iancu, V
Conference  Information: 29th International Semiconductor Conference  (CAS 2006), Date: SEP 27-29, 2006 Sinaia  ROMANIA
2006 International  Semiconductor Conference, Vols 1 and 2, 49-52, 2001.

Traps  in (nc-Si/CaF2)(50) nanostructures
Draghici, M; Jdira, L;  Iancu, V, et al.
Conference Information: 25th  International Semiconductor Conference, Date: OCT  08-12, 2002 SINAIA ROMANIA
CAS: 2002  INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 119-122, 2001.

Trapping  levels in (nc-Si/CaF2)(n) multi-quantum wells
Ioannou-Sougleridis, V; Nassiopoulou, AG; Ciurea, ML, et al.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND  SUPRAMOLECULAR SYSTEMS, 15 (1-2), A  Special Issue: SI, 45-47, 2001.

Electrical  properties of nanocrystalline porous silicon
Ciurea, ML;  Iancu, V
Conference Information: 23rd International  Semiconductor Conference (CAS 2000), Date: OCT  10-14, 2000 SINAIA ROMANIA
2000  INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000  PROCEEDINGS, 55-64,A 2000.

Oxidation-induced  modifications of trap parameters in nanocrystalline porous silicon
Draghici, M; Miu, M; Iancu, V, et al.
Conference Information: 2nd International Conference on Porous Semiconductors -  Science and Technology (PSST-2000), Date: MAR  12-17, 2000 MADRID SPAIN
PHYSICA STATUS  SOLIDI A-APPLIED RESEARCH, 182 (1), 239-243, 2000.

Trapping  levels in nanocrystalline porous silicon
Ciurea, ML;  Draghici, M; Lazanu, S, et al.
APPLIED PHYSICS  LETTERS, 76 (21), 3067-3069, 2000.

Microstructural  aspects related to carriers transport properties of nanocrystalline porous  silicon films
Ciurea, ML; Teodorescu, VS; Nistor, LC, et  al.
JOURNAL OF THE ELECTROCHEMICAL  SOCIETY, 146 (9), 3516-3521,1999.

Theoretical  model for carriers transport in nanocrystalline porous silicon films
Ciurea, ML; Iancu, V; Pavelescu, G, et al.
Conference  Information: 1998 International Semiconductor Conference  (CAS 98), Date: OCT 06-10, 1998 SINAIA  ROMANIA
CAS'98 PROCEEDINGS - 1998  INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 109-112, 1998.

Change  of the optical properties of porous silicon by post anodization treatments
Pavelescu, G; Ciurea, ML; Mihut, L, et al.
Conference  Information: 1998 International Semiconductor Conference  (CAS 98), Date: OCT 06-10, 1998 SINAIA  ROMANIA
CAS'98 PROCEEDINGS - 1998  INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 455-458, 1998.

The  influence of the thermal annealing on optical properties of porous silicon  films
Baltog, I; Ciurea, ML; Pavelescu, G, et  al.
Conference Information: 5th Conference on Optics  (ROMOPTO 97), Date: SEP 09-12, 1997 BUCHAREST  ROMANIA
FIFTH CONFERENCE ON OPTICS  (ROMOPTO '97), PTS 1 AND 2, 3405, 205-210, 1998.

On  the photoluminescence decay in porous silicon films
Baltog,  I; Ciurea, ML; Pavelescu, G, et al.
Conference Information: 5th Conference on Optics (ROMOPTO 97), Date: SEP 09-12, 1997 BUCHAREST ROMANIA
FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 3405, 623-626, 1998.

Quantum  confinement model for electric transport phenomena in fresh and stored  photoluminescent porous silicon films
Iancu, V; Ciurea,  ML
SOLID-STATE ELECTRONICS,A 42 (10), 1893-1896, 1998.

Electrical  behaviour of fresh and stored porous silicon films
Ciurea,  ML; Baltog, I; Lazar, M, et al.
THIN SOLID  FILMS, 325 (1-2), 271-277, 1998.

Electrical  properties of porous silicon stabilised by storage in ambient
Ciurea, ML; Lazar, M; Lazanu, S, et al.
Conference Information: 1997 International Semiconductor Conference (CAS 97),  Date: OCT 07-11, 1997 SINAIA ROMANIA
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR  CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 177-180, 1997.

Electrical  and structural properties of anodized porous silicon
Ciurea,  ML; Pentia, E; Lazar, M, et al.
Conference Information: 1996 International Semiconductor Conference (CAS 96),  Date: OCT 09-12, 1996 SINAIA ROMANIA
CAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR  CONFERENCE, 19TH EDITION, VOLS 1 AND 2, 233-236, 1996.

Visible  photoluminescence in porous silicon prepared in different conditions -  Temperature dependence and decay
Ciurea, ML; Pentia, E;  Manea, A, et al.
PHYSICA STATUS SOLIDI B-BASIC  RESEARCH, 195 (2), 637-645, 1996.

INTERFACE  TRAPPING STATES IN MISIM STRUCTURES, WITH ZNS-MN
PETRE, D;  PINTILIE, I; CIUREA, ML, et al.
THIN SOLID  FILMS, 260 (1, 54-57, 1995.

TRAPPING  LEVELS IN BI12SIO20 CRYSTALS
PETRE, D; PINTILIE, I; BOTILA,  T, et al.
JOURNAL OF APPLIED PHYSICS, 76 (4), 2216-2219, 1994.

INVESTIGATION  OF TRAPPING LEVELS IN HIGH-RESISTIVITY GAAS SINGLE-CRYSTALS DOPED BY CR, USING  OPTICAL CHARGING SPECTROSCOPY
ENACHESCU, M; CIUREA, ML;  LAZARESCU, M, et al.
Conference Information: 20TH  INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS, Date: AUG 06-10, 1990 THESSALONIKI GREECE
20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS,  VOLS 1-3, 686-689, 1990.

 

Influence of crystal growth technology on the tolerance to radiation of silicon for detectors at future accelerators
 Lazanu, S; Lazanu, I; Ciurea, ML
Conference Information: 27th International Semiconductor Conference (CAS), Date: OCT 04-06, 2004 Sinaia ROMANIA
 2004 International Semiconductor Conference, Vols 1and 2, Proceedings,  419-422, 2004.

Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
 Lazanu, S; Lazanu, I
 PHYSICA SCRIPTA   Volume: 69 (5),  376-384, MAY 2004.

Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors
 Lazanu, S; Lazanu, I; Bruzzi, M
Conference Information: 4th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Date: JUL 10-12, 2002 FLORENCE ITALY
  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 514 (1-3),  9-17, 2003.

Role of oxygen and carbon impurities in the radiation resistance of silicon detectors
 Lazanu, S; Lazanu, I
Conference Information: Romanian Conference on Advanced Materials (ROCAM 2003), Date: SEP 15-18, 2003 CONSTANTA ROMANIA
 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS   Volume: 5 ( 3,  647-652, 2003.

Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions
 Lazanu, I; Lazanu, S
 PHYSICA SCRIPTA   Volume: 67 (5),  388-394, MAY 2003.

The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors
 Lazanu, I; Lazanu, S
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Volume: 201 (3),  491-502, MAR 2003.

Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance
 Lazanu, I; Lazanu, S
 PHYSICA SCRIPTA   Volume: 66 (2),  125-132, AUG 2002.

Theoretical calculations of the primary defects induced by pions and protons in SiC
 Lazanu, S; Lazanu, I; Borchi, E, et al.
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 485 (3,  768-773, JUN 11 2002.

Annealing of radiation-induced defects in silicon in a simplified phenomenological model
 Lazanu, S; Lazanu, I
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Volume: 183 (3-4),  383-390, OCT 2001.

Analytical approximations of the Lindhard equations describing radiation effects
 Lazanu, S; Lazanu, I
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 462 (3,  530-535, APR 21 2001.

Characterisation of anodic oxide for GaAs based laser diodes
 Ghita, RV; Pantelica, D; Negoita, F, et al.
Conference Information: 6th Conference on Optics (ROMOPTO 2000), Date: SEP 04-07, 2000 BUCHAREST ROMANIA
 ROMOPTO 2000: SIXTH CONFERENCE ON OPTICS   Volume: 4430,  736-740, 2000.

Trapping levels in nanocrystalline porous silicon
 Ciurea, ML; Draghici, M; Lazanu, S, et al.
 APPLIED PHYSICS LETTERS   Volume: 76 (21),  3067-3069, MAY 22 2000.

Contribution to the failure analysis of AlGaAs GaAs laser diodes
 Ghita, RV; Cengher, D; Lazanu, S, et al.
Conference Information: 30th Annual Boulder Damage Symposium on Optical Materials for High-Power Lasers, Date: SEP 28-OCT 01, 1998 NATL INST STAND & TECHNOL BOULDER CO
 LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 1998   Volume: 3578,  359-369, 1999.

Rutherford backscattering spectroscopy analysis of Au/Cr/GaAs
 Pantelica, D; Negoita, F; Ghita, RV, et al.
Conference Information: 30th Annual Boulder Damage Symposium on Optical Materials for High-Power Lasers, Date: SEP 28-OCT 01, 1998 NATL INST STAND & TECHNOL BOULDER CO
 LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 1998   Volume: 3578,  626-632, 1999.

Hall effect analysis in irradiated silicon samples with different resistivities
 Borchi, E; Bruzzi, M; Dezillie, B, et al.
Conference Information: 1998 Nuclear Science Symposium (NSS), Date: NOV 08-14, 1998 TORONTO CANADA
  IEEE TRANSACTIONS ON NUCLEAR SCIENCE   Volume: 46 (4),  834-838, 1999.

Diamond degradation in hadron fields
 Lazanu, S; Lazanu, I; Borchi, E
Conference Information: 6th International Conference on Advanced Technology and Particle Physics, Date: OCT 05-09, 1998 VILLA OLMO ITALY
 NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS   Volume: 78,  683-688, 1999.

Comparative energy dependence of proton and pion degradation in diamond
  Lazanu, I; Lazanu, S
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 432 ( 2-3),  374-378, AUG 11 1999.

Radiation damage on p-type silicon detectors
 Pirollo, S; Biggeri, U; Borchi, E, et al.
Conference Information: 2nd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Date: MAR 04-06, 1998 FLORENCE ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 426 (1),  126-130, 1999.

Si, GaAs and diamond damage in pion fields with application to LHC
 Lazanu, S; Lazanu, I
Conference Information: 8th International Wire Chamber Conference, Date: FEB 23-27, 1998 VIENNA AUSTRIA
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 419 (2-3),  570-576, 1998.

Theoretical study of pion damage in A(3)B(5) compounds
 Lazanu, S; Lazanu, I; Biggeri, U, et al.
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 413 ( 2-3),  242-248, AUG 21 1998.

Electrical behaviour of fresh and stored porous silicon films
 Ciurea, ML; Baltog, I; Lazar, M, et al.
 THIN SOLID FILMS   Volume: 325 (1-2),  271-277, JUL 18 1998.

Teoretical calculation of diamond damage by pi(+)/pi(-) mesons in the Delta(33) resonance energy range
 Lazanu, I; Lazanu, S; Borchi, E, et al.
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 406 (2,  259-266, APR 1 1998.

Non-ionising energy deposition of pions in GaAs and Si for radiation damage studies
 Lazanu, S; Lazanu, I; Biggeri, U, et al.
Conference Information: 5th International Conference on Advanced Technology and Particle Physics (ICATPP-5), Date: OCT 07-11, 1996 COMO ITALY
 NUCLEAR PHYSICS B,  409-414, 1998.

Electrical properties of porous silicon stabilised by storage in ambient
  Ciurea, ML; Lazar, M; Lazanu, S, et al.
Conference Information: 1997 International Semiconductor Conference (CAS 97), Date: OCT 07-11, 1997 SINAIA ROMANIA
  CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2,  177-180, 1997.

Model predictions for the radiation damage in semiconductors
  Lazanu, S; Lazanu, I; Biggeri, U, et al.
Conference Information: International Conference on Nuclear Data for Science and Technology, Date: MAY 19-24, 1997 TRIESTE ITALY
 INTERNATIONAL CONFERENCE ON NUCLEAR DATA FOR SCIENCE AND TECHNOLOGY, VOL 59, PT 1 AND 2   Volume: 59,  1528-1530, 1997.

Hall effect measurements on proton-irradiated ROSE samples
  Biggeri, U; Borchi, E; Bruzzi, M, et al.
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 400 (1),  113-123, NOV 21 1997.

Model predictions for the NIEL of high energy pions in Si and GaAs
  Lazanu, S; Lazanu, I; Biggeri, U, et al.
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 394 (1-2),  232-234, JUL 11 1997.

CV and Hall effect analysis on neutron irradiated silicon detectors
 Biggeri, U; Borchi, E; Bruzzi, M, et al.
Conference Information: 1st International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Date: MAR 06-08, 1996 IST TECNICO GAETANO SALVEMINI FLORENCE ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 388 ( 3),  330-334, 1997.

Evaluation of charged pions induced damage in the CMS silicon forward detectors
 Biggeri, U; Borchi, E; Bruzzi, M, et al.
Conference Information: 1st International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Date: MAR 06-08, 1996 IST TECNICO GAETANO SALVEMINI FLORENCE ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 388 ( 3),  345-349, 1997.

Non-ionising energy loss of pions in thin silicon samples
 Lazanu, I; Lazanu, S; Biggeri, U, et al.
Conference Information: 1st International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Date: MAR 06-08, 1996 IST TECNICO GAETANO SALVEMINI FLORENCE ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 388 ( 3),  370-374, 1997.

Self annealing effect on neutron irradiated silicon detectors by hall effect analysis
 Biggeri, U; Borchi, E; Bruzzi, M, et al.
Conference Information: 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference, Date: OCT 21-28, 1995 SAN FRANCISCO CA
 1995 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE RECORD, VOLS 1-3,  862-866, 1996.

A phenomenological model for the macroscopic characteristics of irradiated silicon
 Borchi, E; Bruzzi, M; Biggeri, U, et al.
Conference Information: II International Conference on Large-Scale Applications and Radiation Hardness of Semiconductor Detectors, Date: JUN 28-30, 1995 FLORENCE ITALY
 NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS   Volume: 109 (9),  1333-1341, 1996..

Influence of radiation-induced clusters on transport properties of silicon
 Borchi, E; Bruzzi, M; Biggeri, U, et al.
 NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS   Volume: 18 (5),  621-633, MAY 1996.

Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon
 Biggeri, U; Borchi, E; Bruzzi, M, et al.
Conference Information: 4th International Conference on Advanced Technology and Particle Physics, Date: OCT 03-07, 1994 COMO ITALY
 NUCLEAR PHYSICS B,  496-502, 1995.

HALL-EFFECT ANALYSIS ON NEUTRON-IRRADIATED HIGH-RESISTIVITY SILICON
  BIGGERI, U; BORCHI, E; BRUZZI, M, et al.
Conference Information: Frontier Detectors for Frontier Physics of the 6th Pisa Meeting on Advanced Detectors, Date: MAY 22-28, 1994 LA BIODOLA ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 360 ( 1-2),  131-133, 1995.

DEEP LEVELS PROFILE IN NEUTRON-IRRADIATED SILICON DETECTORS
  BIGGERI, U; BORCHI, E; BRUZZI, M, et al.
Conference Information: Frontier Detectors for Frontier Physics of the 6th Pisa Meeting on Advanced Detectors, Date: MAY 22-28, 1994 LA BIODOLA ITALY
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 360 ( 1-2),  134-136, 1995.

RADIATION HARDNESS STUDIES ON SILICON DETECTORS IN FAST-NEUTRON FIELDS
  ANGELESCU, T; CHEREMUKHIN, AE; GHETE, VM, et al.
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 357 (1),  55-63, APR 1 1995.

TYPE INVERSION MEASUREMENTS ON IRRADIATED SILICON BY MEANS OF HALL EFFECT
 BIGGERI, U; BORCHI, E; BRUZZI, M, et al.
Conference Information: 1st International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Date: JUL 07-09, 1993 FLORENCE ITALY
 1ST INTERNATIONAL CONFERENCE ON LARGE SCALE APPLICATIONS AND RADIATION HARDNESS OF SEMICONDUCTOR DETECTORS   Volume: 46,  115-121, 1994.

INFLUENCE OF OXIDATION ON RADIATION HARDNESS OF SILICON DETECTORS
 LI, Z; KRANER, HW; LAZANU, S, et al.
Conference Information: 1st International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Date: JUL 07-09, 1993 FLORENCE ITALY
 1ST INTERNATIONAL CONFERENCE ON LARGE SCALE APPLICATIONS AND RADIATION HARDNESS OF SEMICONDUCTOR DETECTORS   Volume: 46,  123-130, 1994.

STUDIES OF DEEP LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS IRRADIATED BY HIGH FLUENCE FAST-NEUTRONS USING A THERMALLY STIMULATED CURRENT SPECTROMETER
 BIGGERI, U; BORCHI, E; BRUZZI, M, et al.
Conference Information: Nuclear Science Symposium and Medical Imaging Conference (NSS-MIC 93), Date: OCT 30-NOV 06, 1993 SAN FRANCISCO CA
 IEEE TRANSACTIONS ON NUCLEAR SCIENCE   Volume: 41 (4),  964-970, 1994.

A NEUTRON-IRRADIATION FACILITY FOR DAMAGE STUDIES
 ANGELESCU, T; GHETE, VM; LAZANU, I, et al.
 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Volume: 345 (2),  303-307, JUN 15 1994.

STUDIES OF DEEP LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS IRRADIATED BY HIGH FLUENCE FAST-NEUTRONS USING A THERMALLY STIMULATED CURRENT SPECTROMETER
 BIGGERI, U; BORCHI, E; BRUZZI, M, et al.
Conference Information: Nuclear Science Symposium and Medical Imaging Conference (NSS-MIC 93), Date: OCT 30-NOV 06, 1993 SAN FRANCISCO CA
 NUCLEAR SCIENCE SYMPOSIUM & MEDICAL IMAGING CONFERENCE, VOLS 1-3,  244-248, 1993.

High power laser diode|has small refractive index difference between main and limitation regions
Patent Number(s): WO9116747-A1; EP478755-A; RO102871-A
Assignee: INST FIZICA ATOMICA; INST FIZICA TEHNOLOGIA MATERIALELOR; INST FIZICA ATOMICA BUCURESTI
Inventor(s): PETRESCUPR I; LAZANU S; PETRESCU-PRAHOVA I.

FLAT LAYERS BY LPE ON STRUCTURED SUBSTRATES
 PETRESCUPRAHOVA, IB; LEPSA, M; LAZANU, S
Conference Information: 1ST INTERNATIONAL CONF ON EPITAXIAL CRYSTAL GROWTH ( EPI-1 ), Date: APR 01-07, 1990 BUDAPEST HUNGARY
 EPITAXIAL CRYSTAL GROWTH, PTS 1 AND 2   Volume: 31-4,  B613-B617, 1991.

Obtaining 2,2-bis-(4-hydroxyphenyl) propane by crystallisation as aduct
Patent Number:RO119296-B1
Patent Assignee: ICECHIM
Inventor(s): CATANA E; STOICA T; CONSTANTIN M

Two-dimensional arrays of nanometre scale holes and  nano-V-grooves in oxidized Si wafers for the selective growth of Ge dots or Ge/Si hetero-nanocrystals
Olzierski A; Nassiopoulou AG; Raptis I; et al.
NANOTECHNOLOGY,Volume: 15, Issue: 11, Pages: 1695-1700, Article Number: PII S0957-4484(04)84318-6, DOI: 10.1088/0957-4484/15/11/056, Published: NOV 2004

Absence of island-island interaction during formation of isolated Ge islands in small windows
Stoica T; Vescan L; Sutter E
JOURNAL OF APPLIED PHYSICS,Volume: 95, Issue: 12, Pages: 7707-7711, DOI: 10.1063/1.1736312, Published: JUN 15 2004

Spectroellipsometric study of the sol-gel nanocrystalline ITO multilayer films
Stoica TF; Gartner M; Losurdo M; et al.
Conference:3rd International Conference on Spectroscopic Ellipsometry (ICSE-3)Location: Vienna, AUSTRIADate: JUL 06-12, 2003
THIN SOLID FILMS,Volume: 455, Pages: 509-512, DOI: 10.1016/j.tsf.2003.11.251, Published: MAY 1 2004

GaN nanocolumns on Si(III) grown by molecular beam epitaxy
Calarco R; Marso K; Meijers R; et al.
Editor(s): Osvald J; Hascik S
Conference:5th International Conference on Advanced Semiconductor Devices and MicrosystemsLocation: Smolenice, SLOVAKIADate: OCT 17-21, 2004
Sponsor(s): Slovak Acad Sci, Inst Elect Engn; Slovak Univ  Technol, Fac Elect Engn& Informat Technol, MIcroelectron Dept;  European Comm Represented Commiss European Comm Res Directorate Gen;  IEEE Elect Dev Soc
ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems,Pages: 9-12, Published: 2004

Line shape analysis of electron-hole plasma electroluminescence in fully strained SiGe epitaxial layers
Stoica T; Vescan L
JOURNAL OF APPLIED PHYSICS,Volume: 94, Issue: 7, Pages: 4400-4408, DOI: 10.1063/1.1606513, Published: OCT 1 2003

Quantum efficiency of SiGe LEDs
Stoica T; Vescan L
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,Volume: 18, Issue: 6, Pages: 409-416, Article Number: PII S0268-1242(03) 55650-4, DOI: 10.1088/0268-1242/18/6/303, Published: JUN 2003

Self-assembling of Ge on finite Si(001) areas comparable with the island size
Vescan L; Stoica T; Hollander B; et al.
APPLIED PHYSICS LETTERS,Volume: 82, Issue: 20, Pages: 3517-3519, DOI: 10.1063/1.1576498, Published: MAY 19 2003

Optoelectronic properties of thick SiGe layers grown as small mesas by low pressure chemical vapor deposition
Stoica T; Vescan L
JOURNAL OF APPLIED PHYSICS,Volume: 93, Issue: 8, Pages: 4461-4467, DOI: 10.1063/1.1559636, Published: APR 15 2003

Electroluminescence study on electron hole plasma in strained SiGe epitaxial layers
Stoica T; Vescan L; Muck A; et al.
Conference:Spring Meeting of the European-Materials-Research-Society (E-MRS)Location: STRASBOURG, FRANCEDate: JUN 18-21, 2002
Sponsor(s): European Mat Res Soc
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,Volume: 16, Issue: 3-4, Pages: 359-365, Article Number: PII S1386-9477(02)00625-2, DOI: 10.1016/S1386-9477(02)00625-2, Published: MAR 2003

Luminescence of laterally ordered Ge islands along < 100 > directions
Vescan L; Stoica T
JOURNAL OF APPLIED PHYSICS,Volume: 91, Issue: 12, Pages: 10119-10126, DOI: 10.1063/1.1481205, Published: JUN 15 2002

Lateral ordering of Ge islands on Si mesas made by selective epitaxial growth
Vescan L; Stoica T; Hollander B
Conference:Spring Meeting of the European-Materials-Research-SocietyLocation: STRASBOURG, FRANCEDate: JUN 05-08, 2001
Sponsor(s): European Mat Res Soc
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,Volume: 89, Issue: 1-3, Pages: 49-53, Article Number: PII S0921-5107(01)00789.9, DOI: 10.1016/S0921-5107(01)00789-9, Published: FEB 14 2002

PbSe1-xTex thick thermoelectric films obtained by electrochemical deposition from aqueous solutions
Nedelcu M; Sima M; Stoica T; et al.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Volume: 3, Issue: 4, Pages: 909-914, Published: DEC 2001

Size distribution and optical properties of self-assembled Ge on Si
Vescan L; Goryll M; Stoica T; et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,Volume: 71, Issue: 4, Pages: 423-432, DOI: 10.1007/s003390000555, Published: OCT 2000

Room-temperature light-emitting diodes with Ge islands
Vescan L; Chretien O; Stoica T; et al.
Conference:Spring Meeting of the European-Materials-Research-SocietyLocation: STRASBOURG, FRANCEDate: JUN 01-04, 1999
Sponsor(s): European Mat Res Soc
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,Volume: 3, Issue: 5-6, Pages: 383-387, DOI: 10.1016/S1369-8001(00)00059-7, Published: OCT-DEC 2000

Influence of the mesa size on Ge island electroluminescence properties
Chretien O; Stoica T; Dentel D; et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,Volume: 15, Issue: 9, Pages: 920-925, DOI: 10.1088/0268-1242/15/9/308, Published: SEP 2000

Size distribution and electroluminescence of self-assembled Ge dots
Vescan L; Stoica T; Chretien O; et al.
JOURNAL OF APPLIED PHYSICS,Volume: 87, Issue: 10, Pages: 7275-7282, DOI: 10.1063/1.372980, Published: MAY 15 2000

Electrical and photovoltaic properties of photosensitised ITO/a-Si : H p-i-n/TPyP/Au cells
Antohe S; Ion L; Tomozeiu N; et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS,Volume: 62, Issue: 3, Pages: 207-216, DOI: 10.1016/S0927-0248(99)00127-0, Published: MAY 15 2000

Optical characterization of dielectric borophosphosilicate glass
Gartner M; Modreanu M; Bosch S; et al.
Conference:10th Workshop on Dielectrics in MicroelectronicsLocation: BARCELONA, SPAINDate: NOV 03-05, 1999
Sponsor(s): Univ Barcelona, Dept Electr; Autonomous Univ, Engn Electr Dept; Polytech Univ Catalonia; Microelectr Res Ctr Barcelona
MICROELECTRONICS RELIABILITY,Volume: 40, Issue: 4-5, Pages: 617-620, DOI: 10.1016/S0026-2714(99)00291-7, Published: APR-MAY 2000

Process for obtaining heat-setting para-alkylphenol-formaldehyde resins
Patent Number:RO115639-B1
Patent Assignee: ICECHIM INST CERC
Inventor(s): CRISTU Z; ENACHESCU M V; TOADER M; et al.

Weak localization effects in ZnO surface wells
Goldenblum A; Bogatu V; Stoica T; et al.
PHYSICAL REVIEW B,Volume: 60, Issue: 8, Pages: 5832-5838, DOI: 10.1103/PhysRevB.60.5832, Published: AUG 15 1999

SiGe-based light emitting diodes
Vescan L; Stoica T
Editor(s): Houghton DC; Fitzgerald EA
Conference:Conference on Silicon-based OptoelectronicsLocation: SAN JOSE, CADate: JAN 27-28, 1999
Sponsor(s): SPIE; Defense Adv Res Projects Agcy
SILICON-BASED OPTOELECTRONICS,Book Series: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Volume: 3630, Pages: 163-170, DOI: 10.1117/12.342786, Published: 1999

Room-temperature SiGe light-emitting diodes
Vescan L; Stoica T
Editor(s): Linnros J; Priolo F; Canham L
Conference:Symposium B on Light Emission from Silicon - Progress Towards  Si-based Optoelectronics at the Spring Meeting of the  European-Materials-Research-SocietyLocation: STRASBOURG, FRANCEDate: JUN 16-19, 1998
Sponsor(s): DCA Instruments; High Voltage Engn Europa BV; CNR IMETEM Catania; GNSM-CNR Roma; European Mat Res Soc
LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS,Book Series: EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA-PROCEEDINGS, Volume: 77, Pages: 485-489, Published: 1999

Room-temperature SiGe light-emitting diodes
Vescan L; Stoica T
Conference:Symposium B on Light Emission from Silicon - Progress Towards  Si-based Optoelectronics at the Spring Meeting of the  European-Materials-Research-SocietyLocation: STRASBOURG, FRANCEDate: JUN 16-19, 1998
Sponsor(s): DCA Instruments; High Voltage Engn Europa BV; CNR IMETEM Catania; GNSM-CNR Roma; European Mat Res Soc
JOURNAL OF LUMINESCENCE,Volume: 80, Issue: 1-4, Pages: 485-489, DOI: 10.1016/S0022-2313(98)00160-4, Published: DEC 1998

Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation
Stoica T; Vescan L; Goryll M
JOURNAL OF APPLIED PHYSICS,Volume: 83, Issue: 6, Pages: 3367-3373, DOI: 10.1063/1.367104, Published: MAR 15 1998

Selective epitaxial growth of strained SiGe/Si for optoelectronic devices
Vescan L; Stoica T; Goryll M; et al.
Conference:2nd International Conference on Low Dimensional Structures and DevicesLocation: LISBON, PORTUGALDate: MAY 19-21, 1997
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,Volume: 51, Issue: 1-3, Pages: 166-169, DOI: 10.1016/S0921-5107(97)00253-5, Published: FEB 27 1998

Dielectric properties of sol-gel TiO2(La) films
Gartner M; Parlog C; Szekeres A; et al.
Editor(s): Akos G; Lupkovics G; Podmaniczky A
Conference:5th Congress on Modern OpticsLocation: BUDAPEST, HUNGARYDate: SEP 14-17, 1998
Sponsor(s): Sci Soc Opt Acoust Mot Picture & Theater  Technol; SPIE, Hungary Chapter; Int Commiss Opt; Hungarian Natl Comm  Tech Dev; Fdn Ind, Hungary; Natl Business & Innovat Ctr, Hungary
OPTIKA '98 - 5TH CONGRESS ON MODERN OPTICS,Book Series: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Volume: 3573, Pages: 216-219, DOI: 10.1117/12.321014, Published: 1998

SiGe nanostructures
Vescan L; Goryll M; Grimm K; et al.
Editor(s): Kayali S
Conference:1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF SystemsLocation: ANN ARBOR, MIDate: SEP 17-18, 1998
Sponsor(s): IEEE Microwave Theory & Tech Soc; NASA Lewis Res Ctr, Jet Propuls Lab; Army Res Off
1998 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS,Pages: 38-46, DOI: 10.1109/SMIC.1998.750173, Published: 1998

Physics of optimal resonant tunneling
Racec PN; Stoica T; Popescu C; et al.
PHYSICAL REVIEW B,Volume: 56, Issue: 7, Pages: 3595-3597, DOI: 10.1103/PhysRevB.56.3595, Published: AUG 15 1997

Amorphous rf-sputtered Si100-xNix thin films with O<=x<=15 at.%: Structural, optical and electrical properties
BeluMarian A; Serbanescu MD; Manaila R; et al.
THIN SOLID FILMS,Volume: 301, Issue: 1-2, Pages: 197-202, DOI: 10.1016/S0040-6090(97)00007-2, Published: JUN 1 1997

Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1-xGexSi nanostructures
Vescan L; Dieker C; Souifi A; et al.
JOURNAL OF APPLIED PHYSICS,Volume: 81, Issue: 10, Pages: 6709-6715, DOI: 10.1063/1.365212, Published: MAY 15 1997

Epitaxial growth by low pressure chemical vapour deposition of Si(1-x)Ge(x)/Si and applications
Vescan L; Goryll M; Grimm K; et al.
Book Group NATL INST RES & DEV MICROTECHNOL, BUCHAREST, ROMANIA; NATL INST RES & DEV MICROTECHNOL, BUCHAREST, ROMANIA
Conference:1997 International Semiconductor Conference (CAS 97)Location: SINAIA, ROMANIADate: OCT 07-11, 1997
Sponsor(s): Natl Inst Res & Dev Microtechnol, Romania;  Romanian Acad; Electrochem Soc Inc; IEEE Electron Devices Soc; Minist  Res & Technol, Romania; IEEE Romania Sect, Electron Devices Chapter
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2,Pages: 405-413, Published: 1997

EFFECTS OF ANNEALING ON THE CONDUCTIVITY OF C-60 THIN-FILMS
BELUMARIAN A; MANAILA R; STOICA T; et al.
FULLERENE SCIENCE AND TECHNOLOGY,Volume: 3, Issue: 5, Pages: 495-509, DOI: 10.1080/153638X9508543803, Published: 1995

MAGNETOTRANSPORT AND PHOTOLUMINESCENCE OF 2-DIMENSIONAL HOLE GASES IN SI/SI1-XGEX/SI HETEROSTRUCTURES
LOO R; VESCAN L; HARTMANN A; et al.
PHYSICAL REVIEW B,Volume: 50, Issue: 24, Pages: 18113-18123, DOI: 10.1103/PhysRevB.50.18113, Published: DEC 15 1994

HIGH GAP SPUTTERED DLC LAYERS
MOROSANU CO; STOICA T; DEMARTINO C; et al.
DIAMOND AND RELATED MATERIALS,Volume: 3, Issue: 4-6, Pages: 814-816, DOI: 10.1016/0925-9635(94)90275-5, Published: APR 1994

LINE-SHAPE MODEL FOR THE BROAD PHOTOLUMINESCENCE BAND FROM SI1-XGEX/SI HETEROSTRUCTURES
HARTMANN A; VESCAN L; DIEKER C; et al.
PHYSICAL REVIEW B,Volume: 48, Issue: 24, Pages: 18276-18279, DOI: 10.1103/PhysRevB.48.18276, Published: DEC 15 1993

MISFIT DISLOCATIONS IN FINITE LATERAL SIZE SI1-XGEX FILMS GROWN BY SELECTIVE EPITAXY
STOICA T; VESCAN L
JOURNAL OF CRYSTAL GROWTH, Volume: 131, Issue: 1-2, Pages: 32-40, DOI: 10.1016/0022-0248(93)90393-B, Published: JUL 1993

REDUCTION OF MISFIT DISLOCATION DENSITY IN FINITE LATERAL SIZE SI1-XGEX FILMS GROWN BY SELECTIVE EPITAXY
VESCAN L; STOICA T; DIEKER C; et al.
Editor(s): Tischler MA; Collins RT; Thewalt MLW; et al.
Conference:SYMP ON SILICON-BASED OPTOELECTRONIC MATERIALS, AT THE 1993 SPRING MEETING OF THE MATERIALS-RESEARCH-SOCLocation: SAN FRANCISCO, CADate: APR 12-14, 1993
Sponsor(s): MAT RES SOC; USA, ARMY RES OFF; USN, OFF NAVAL RES; USAF, OFF SCI RES
SILICON-BASED OPTOELECTRONIC MATERIALS,Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, Volume: 298, Pages: 45-50, DOI: 10.1557/PROC-298-45, Published: 1993

MEYER-NELDEL CORRELATION IN SEMICONDUCTORS AND MOTT MINIMUM METALLIC CONDUCTIVITY
POPESCU C; STOICA T
PHYSICAL REVIEW B,Volume: 46, Issue: 23, Pages: 15063-15071, DOI: 10.1103/PhysRevB.46.15063, Published: DEC 15 1992

Amorphous silicon alloy|has stepped conductivity deposit produced by luminescent discharge with supplementary nitrogen addn.
Patent Number:RO83540-A
Patent Assignee: INST CENT FIZICA
Inventor(s): POPESCU C; STOICA T; TONESCU R C; et al.

Amorphous silicon solar element|consists of  quasi-intrinsic semiconductor and insulated layers with transparent or  metallic electrodes
Patent Number:RO83541-A
Patent Assignee: INST CENT FIZ BUCUR
Inventor(s): STOICA T; POPESCU C; IONESCU C; et al.

Mono:nitro aromatic cpd. redn. to aromatic  mono:amine|with ammonia synthesis gas using nickel-contg.  copper-aluminium alloy catalyst
Patent Number:RO67501-A
Patent Assignee: COMB CHIM CRAIOVA
Inventor(s): TEUSDEA M G; STOICA T; SIRBU L; et al.

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Updated: 31 ian 2012 - Ionel Stavarache: stavarache@infim.ro

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